A multi-level-cell spin-transfer torque memory with series-stacked magnetotunnel junctions

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2010, Pages 47-48

  Ishigaki, T ^a   Kawahara, T ^a   Takemura, R ^a   Ono, K ^a   Ito, K ^a   Matsuoka, H ^a   Ohno, H ^b  

^a HITACHI LTD   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

MAGNETIZATION DIRECTION; MULTI-BITS; MULTI-LEVEL; SPIN TRANSFER; SPIN TRANSFER TORQUE;

RANDOM ACCESS STORAGE;

MAGNETIC DEVICES;

EID: 77957864471     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2010.5556126     Document Type: Conference Paper

References (2)

1. R. Takemura et al., VLSI Circ. Dig., 2009, pp. 84-85.
2. K. Miura et al., VLSI Tech. Dig., 2007, pp. 234-235.