An oxide-buffered BE-MANOS charge-trapping device and the role of Al 2O3

2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design, Proceedings, NVSMW/ICMTD

Volumn , Issue , 2008, Pages 101-102

  Lai, Sheng Chih ^a   Lue, Hang Ting ^a   Liao, Chien Wei ^a   Huang, Yu Fong ^a   Yang, Ming Jui ^c   Lue, Yi Hsien ^c   Wu, Tai Bor ^b   Hsieh, Jung Yu ^a   Wang, Szu Yu ^a   Hong, Shih Ping ^a   Hsu, Fang Hao ^a   Shen, Chih Yen ^c   Luo, Guang Li ^c   Chien, Chao Hsin ^c   Hsieh, Kuang Yeu ^a   Liu, Rich ^a   Lu, Chih Yuan ^a  

^a MACRONIX INTERNATIONAL CO LTD   (Taiwan)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CHARGE TRAPPING; ELECTRIC CONDUCTIVITY; SEMICONDUCTOR STORAGE; TECHNOLOGY;

INTERNATIONAL CONFERENCES; MEMORY TECHNOLOGY; NON-VOLATILE; SEMICONDUCTOR MEMORIES; TRAPPING DEVICES;

SEMICONDUCTOR MATERIALS;

EID: 50249101160     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NVSMW.2008.35     Document Type: Conference Paper

References (6)

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2. S.C. Lai et al, IEEE NVSMW, pp. 88-89, 2007.
3. C.H. Lee et al, IEDM Tech. Dig., pp. 26.5.1 - 26.5.4, 2003.
4. Y. Shin et al, IEDM Tech. Dig., pp. 327-330, 2005.
5. S.C. Lai et al, VLSI-TSA,, pp. 14-15, 2007.
6. H.T. Lue et al, IEEE Electron Device Letters, vol. 25, pp.816-818, 2004.