A new approach for improving operating margin of unipolar ReRAM using local minimum of reset voltage

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2010, Pages 87-88

  Sakotsubo, Y ^a   Terai, M ^a   Kotsuji, S ^a   Saito, Y ^a   Tada, M ^a   Yabe, Y ^a   Hada, H ^a  

^a NEC CORPORATION   (Japan)

Author keywords

Non volatile memory; Switching mechanism; Switching model; Tunnel barrier; Unipolar ReRAM

Indexed keywords

NON-VOLATILE MEMORIES; SWITCHING MECHANISM; SWITCHING MODEL; TUNNEL BARRIER; UNIPOLAR RERAM;

TANTALUM;

SWITCHING;

EID: 77957858002     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2010.5556181     Document Type: Conference Paper

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