A novel CuxSiyO resistive memory in logic technology with excellent data retention and resistance distribution for embedded applications

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2010, Pages 89-90

  Wang, M ^a   Luo, W J ^a   Wang, Y L ^a   Yang, L M ^a   Zhu, W ^a   Zhou, P ^a   Yang, J H ^a   Gong, X G ^a   Lin, Y Y ^a   Huang, R ^b   Song, S ^b   Zhou, Q T ^b   Wu, H M ^b   Wu, J G ^b   Chi, M H ^b  

^a FUDAN UNIVERSITY   (China)

^b SEMICONDUCTOR MANUFACTURING INTERNATIONAL CORPORATION   (China)

Author keywords

Data retention and disturb; Logic; RRAM

Indexed keywords

BINARY OXIDES; DATA RETENTION; EMBEDDED APPLICATION; HIGH DENSITY; LOGIC; LOGIC TECHNOLOGY; LOW COSTS; NON-VOLATILE MEMORIES; PERFORMANCE IMPROVEMENTS; RESISTANCE DISTRIBUTION; RESISTIVE MEMORIES; RRAM; STANDARD LOGIC; TEST CHIPS; VACANCY MIGRATION; X-WINDOW;

ACTIVATION ENERGY; SILICON; SILICON COMPOUNDS;

TECHNOLOGY;

EID: 77957882846     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2010.5556182     Document Type: Conference Paper

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