Ferroelectric-gate transistor as a capacitor-less DRAM cell (FEDRAM)

Integrated Ferroelectrics

Volumn 27, Issue 1, 1999, Pages 9-18

  Han, Jin Ping ^a   Ma, T P ^a  

^a Yale University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; FERROELECTRIC DEVICES; FERROELECTRIC MATERIALS; INTERFACES (MATERIALS); NONVOLATILE STORAGE; SILICON NITRIDE; SUBSTRATES;

METAL FERROELECTRIC INSULATORS SEMICONDUCTOR FIELD EFFECT TRANSISTOR; NON VOLATILE MEMORY DEVICE; RETENTION TIME;

GATES (TRANSISTOR);

EID: 0033343980     PISSN: 10584587     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1080/10584589908228451     Document Type: Article

References (6)

1. Shu-Yau Wu, IEEE Trans. Electron Devices, Vol.ED-21(8), 499 (1974).
2. J.F. Scott and C.A. Araujo, Science, 246, p.1400 (1989).
3. J.T. Evans and R. Womack, IEEE J.Solid-St. Cir. 23, 1171(1988).
4. S.L. Miller and P. McWorter, J.Appl. Phys. 72, 5999 (1992).
5. Jin-ping Han and T.P. Ma, Appl. Phys. Lett. 72(10) 1185 (1998).
6. T.P. Ma and Jin-ping Han, "A Ferroelectric Dynamic Random Access Memory" US patent pending.