Instabilities in amorphous oxide semiconductor Thin-Film transistors

IEEE Transactions on Device and Materials Reliability

Volumn 10, Issue 4, 2010, Pages 460-475

  Conley Jr , John F ^a  

^a 1148 Kelley Engineering Center Corvallis   (United States)

Author keywords

Amorphous oxide semiconductors (AOS); bias stressing; reliability; stability; transparent thin film transistors (TTFTs)

Indexed keywords

AMORPHOUS OXIDE SEMICONDUCTORS; ANALOG CURRENT; BIAS STRESS; BIAS STRESSING; H SYSTEMS; LARGE-AREA ELECTRONICS; LOW TEMPERATURES; MECHANICAL STRESS; NEW MATERIAL; ORGANIC LIGHT EMITTING DIODE DISPLAY; SURFACE PASSIVATION; TRANSPARENT ELECTRONICS; TRANSPARENT THIN FILM TRANSISTOR;

AMORPHOUS FILMS; ELECTRON MOBILITY; ELECTRONIC EQUIPMENT; ENGINEERING EXHIBITIONS; FLEXIBLE DISPLAYS; LIGHT EMITTING DIODES; ORGANIC LIGHT EMITTING DIODES (OLED); PASSIVATION; RELIABILITY; STABILITY; STRESSES; SURFACE DEFECTS;

THIN FILM TRANSISTORS;

EID: 79551552419     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2010.2069561     Document Type: Article

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