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Applied Physics Letters

Volumn 95, Issue 12, 2009, Pages

Impact of device configuration on the temperature instability of Al-Zn-Sn-O thin film transistors

(6) Jeong, Jae Kyeong a Yang, Shinhyuk b Cho, Doo Hee b Park, Sang Hee Ko b Hwang, Chi Sun b Cho, Kyoung Ik b

a Inha University (South Korea)

b Electronics and Telecommunications Research Institute (ETRI) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BOTTOM GATE; CHANNEL LAYERS; DEVICE CONFIGURATIONS; DEVICE STABILITY; INTERFACIAL TRAPS; PASSIVATION LAYER; SUBTHRESHOLD; TEMPERATURE INSTABILITY; TEMPERATURE STABILITY; THERMAL ACTIVATION ENERGIES; TOP GATE;

ACTIVATION ENERGY; ALUMINUM; DRAIN CURRENT; FIELD EFFECT TRANSISTORS; PASSIVATION; THERMAL EFFECTS; THIN FILM TRANSISTORS; THIN FILMS; ZINC;

TIN;

EID: 70349656356 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3236694 Document Type: Article

Times cited : (58)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.