Stability of transparent zinc tin oxide transistors under bias stress

Applied Physics Letters

Volumn 90, Issue 6, 2007, Pages

  Gorrn P ^a   Holzer P ^a   Riedl, T ^a   Kowalsky, W ^a   Wang, J ^b   Weimann, T ^b   Hinze, P ^b   Kipp, S ^a  

^a TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

^b PHYSIKALISCH TECHNISCHE BUNDESANSTALT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GATES (TRANSISTOR); THERMAL EFFECTS; THERMODYNAMIC STABILITY; THRESHOLD VOLTAGE; ZINC COMPOUNDS;

GATE BIAS STRESS; ZINC TIN OXIDE (ZTO) TRANSISTORS;

THIN FILM TRANSISTORS;

EID: 33846965196     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2458457     Document Type: Article

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