Stability of thin film transistors incorporating a zinc oxide or indium zinc oxide channel deposited by a high rate sputtering process

Semiconductor Science and Technology

Volumn 24, Issue 8, 2009, Pages

  Flewitt, A J ^a   Dutson, J D ^b   Beecher, P ^a   Paul, D ^a   Wakeham, S J ^b   Vickers, M E ^a   Ducati, C ^a   Speakman, S P ^c   Milne, W I ^a   Thwaites, M J ^b  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b Plasma Quest Limited   (United Kingdom)

^c 3T Technologies Ltd   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELEVATED TEMPERATURE; FIELD-EFFECT MOBILITIES; GATE-BIAS STRESS; HIGH DENSITY PLASMAS; HIGH RATE SPUTTERING; INDIUM ZINC OXIDES; ORDER OF MAGNITUDE; PROCESSING TEMPERATURE; RF-MAGNETRON SPUTTERING; RF-SPUTTERING; ROOM TEMPERATURE; SPUTTERING TARGET; ZNO;

CHARGE TRAPPING; DEPOSITION; MAGNETRON SPUTTERING; METALLIC COMPOUNDS; OXIDE FILMS; PLASMA DEPOSITION; PROCESSING; THIN FILM TRANSISTORS; THIN FILMS; ZINC; ZINC OXIDE;

INDIUM;

EID: 68949101948     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/24/8/085002     Document Type: Article

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