Improving the gate stability of ZnO thin-film transistors with aluminum oxide dielectric layers

Journal of the Electrochemical Society

Volumn 155, Issue 12, 2008, Pages

  Oh, Min Suk ^a   Lee, Kimoon ^a   Song, J H ^b   Lee, Byoung H ^c   Sung, Myung M ^c   Hwang, D K ^b   Im, Seongil ^a  

^a Yonsei University   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

^c Hanyang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ALUMINUM; ANNEALING; ATOMIC LAYER DEPOSITION; DRAIN CURRENT; ELASTICITY; FABRICATION; HYSTERESIS; OXIDES; OZONE WATER TREATMENT; PHYSICAL VAPOR DEPOSITION; PULSED LASER DEPOSITION; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; RELIABILITY; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM DEVICES; THIN FILM TRANSISTORS; TRANSISTORS; ZINC ALLOYS; ZINC OXIDE;

ALUMINUM OXIDES; ATOMIC LAYER DEPOSITION (ALD; BIAS STRESSES; ELECTRICAL CHARACTERISTICS; GATE BIASES; GATE DEVICES; HIGH QUALITIES; OPTIMIZED DEVICES; ROOM TEMPERATURES; TRANSFER CHARACTERISTICS; UNDER GATES; ZNO DEVICES;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 54949102088     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2994629     Document Type: Article

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