Fast PEALD ZnO thin-film transistor circuits

IEEE Transactions on Electron Devices

Volumn 57, Issue 2, 2010, Pages 530-534

  Mourey, Devin A ^a   Zhao, Dalong A ^b   Sun, Jie ^c   Jackson, Thomas N ^b  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b The Pennsylvania State University   (United States)

^c INTEL CORPORATION   (United States)

Author keywords

Oxide thin film transistors (TFTs); Plasma enhanced atomic layer deposition (PEALD); Thin film circuits; ZnO

Indexed keywords

BIAS STRESS; HIGH MOBILITY; LOW TEMPERATURES; MANUFACTURABLE PROCESS; PLASMA-ENHANCED ATOMIC LAYER DEPOSITION; PROPAGATION DELAYS; STAGE RING OSCILLATORS; SUPPLY VOLTAGES; TFT CIRCUITS; THRESHOLD VOLTAGE SHIFTS; ZNO; ZNO FILMS; ZNO THIN FILM;

ATOMIC LAYER DEPOSITION; ATOMS; DELAY CIRCUITS; FABRICATION; METALLIC FILMS; OSCILLATORS (ELECTRONIC); PLASMA DEPOSITION; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM TRANSISTORS; THRESHOLD VOLTAGE; ZINC OXIDE;

THIN FILM CIRCUITS;

EID: 76349107815     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2037178     Document Type: Article

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