SCOPUS 정보 검색 플랫폼

Volumn 94, Issue 22, 2009, Pages

Comparative study of electrical instabilities in top-gate InGaZnO thin film transistors with Al2O3 and Al2O 3/SiNx gate dielectrics

(6) Lee, Jeong Min a Cho, In Tak a Lee, Jong Ho a Cheong, Woo Seok b Hwang, Chi Sun b Kwon, Hyuck In c

a Kyungpook National University (South Korea)

b Electronics and Telecommunications Research Institute (ETRI) (South Korea)

c Daegu University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

COMPARATIVE STUDIES; DENSITY OF TRAP STATE; DEVICE DEGRADATION; ELECTRICAL INSTABILITY; SUBTHRESHOLD SLOPE; THRESHOLD VOLTAGE SHIFTS; TIME DEPENDENCE; TOP-GATE; TRAPPED ELECTRONS;

ALUMINUM; CHARGE TRAPPING; DEGRADATION; ELECTRIC NETWORK ANALYSIS; GALLIUM; GATES (TRANSISTOR); INDIUM; MOS CAPACITORS; OZONE WATER TREATMENT; SILICON NITRIDE; THIN FILM TRANSISTORS; THIN FILMS; THRESHOLD VOLTAGE; ZINC; ZINC OXIDE;

GATE DIELECTRICS;

EID: 66749143525 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3151865 Document Type: Article

Times cited : (106)

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