Bias-stress-stable solution-processed oxide thin film transistors

ACS Applied Materials and Interfaces

Volumn 2, Issue 3, 2010, Pages 611-615

  Jeong, Youngmin ^a   Bae, Changdeuck ^a   Kim, Dongjo ^a   Song, Keunkyu ^a   Woo, Kyoohee ^a   Shin, Hyunjung ^b   Cao, Guozhong ^c   Moon, Jooho ^a  

^a Yonsei University   (South Korea)

^b Kookmin University   (South Korea)

^c University of Washington   (United States)

Author keywords

Amorphous oxide semiconductor; Bias stress stability; Gallium tin zinc oxide; Solution processed transistor

Indexed keywords

AMORPHOUS OXIDE SEMICONDUCTORS; BIAS-STRESS STABILITY; SOLUTION-PROCESSED; STRESS STABILITY; TIN-ZINC OXIDES;

ELECTRON SPIN RESONANCE SPECTROSCOPY; OXYGEN; OXYGEN VACANCIES; PARAMAGNETIC RESONANCE; SPECTROSCOPY; THIN FILM TRANSISTORS; THIN FILMS; TIN; TITANIUM COMPOUNDS; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC; ZINC OXIDE;

AMORPHOUS FILMS;

EID: 78249268197     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am900787k     Document Type: Article

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