Stable room temperature deposited amorphous InGaZn O4 thin film transistors

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 26, Issue 3, 2008, Pages 959-962

  Lim, Wantae ^a   Kim, S H ^a   Wang, Yu Lin ^a   Lee, J W ^a,c   Norton, D P ^a   Pearton, S J ^a   Ren, F ^a   Kravchenko, I I ^b  

^a University of Florida   (United States)

^b Inje University ^*  (United States)

^c Inje University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

GATE LENGTH; GLASS SUBSTRATES; ROOM TEMPERATURE;

AMORPHOUS MATERIALS; ELECTRIC CONDUCTIVITY MEASUREMENT; GATE DIELECTRICS; MAGNETRON SPUTTERING; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING INDIUM COMPOUNDS;

THIN FILM TRANSISTORS;

EID: 44649153699     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2917075     Document Type: Article

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