The influence of the gate dielectrics on threshold voltage instability in amorphous indium-gallium-zinc oxide thin film transistors

Applied Physics Letters

Volumn 95, Issue 12, 2009, Pages

  Lee, Jaeseob ^a   Park, Jin Seong ^b   Pyo, Young Shin ^a   Lee, Dong Bum ^a   Kim, Eun Hyun ^a   Stryakhilev, Denis ^a   Kim, Tae Woong ^a   Jin, Dong Un ^a   Mo, Yeon Gon ^a  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^b Dankook University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRAP; ELECTRICAL PERFORMANCE; FIELD-EFFECT MOBILITIES; GATE INSULATOR; HIGH DENSITY; HYDROGEN CONTENTS; POSITIVE GATE BIAS; ZINC OXIDE THIN FILMS;

AMORPHOUS FILMS; CHARGE TRAPPING; GALLIUM; GATES (TRANSISTOR); HYDROGEN; INDIUM; MOS CAPACITORS; SILICON NITRIDE; STABILITY; THIN FILM TRANSISTORS; THIN FILMS; THRESHOLD VOLTAGE; ZINC; ZINC OXIDE;

GATE DIELECTRICS;

EID: 70349668804     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3232179     Document Type: Article

References (19)

1. I. D. Kim, Y. Choi, and H. L. Tuller, Appl. Phys. Lett. 0003-6951 87, 043509 (2005). 10.1063/1.1993762 (Pubitemid 41118001)
2. D. H. Kim, N. G. Cho, H. G. Kim, H. S. Kim, J. M. Hong, and I. D. Kim, Appl. Phys. Lett. 0003-6951 93, 032901 (2008). 10.1063/1.2954014
3. K. Kumomi, K. Nomura, T. Kamiya, and H. Hosono, Thin Solid Films 0040-6090 516, 1516 (2008). 10.1016/j.tsf.2007.03.161 (Pubitemid 351172370)
4. K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, Nature (London) 0028-0836 432, 488 (2004). 10.1038/nature03090 (Pubitemid 39585210)
5. W. Lim, J. H. Jang, S. H. Kim, D. P. Norton, V. Craciun, S. J. Pearton, F. Ren, and H. Shen, Appl. Phys. Lett. 0003-6951 93, 082102 (2008). 10.1063/1.2975959
6. R. B. M. Cross and M. M. De Souza, Appl. Phys. Lett. 0003-6951 89, 263513 (2006). 10.1063/1.2425020 (Pubitemid 46058083)
7. P. Gorrn, P. Holzer, T. Reidl, W. Kowalsky, J. Wang, T. Weimann, P. Hinze, and S. Kipp, Appl. Phys. Lett. 0003-6951 90, 063502 (2007). 10.1063/1.2458457 (Pubitemid 46247705)
8. A. Suresh and J. F. Muth, Appl. Phys. Lett. 0003-6951 92, 033502 (2008). 10.1063/1.2824758 (Pubitemid 351160654)
9. J. M. Lee, I. T. Cho, J. H. Lee, and H. I. Kown, Appl. Phys. Lett. 0003-6951 93, 093504 (2008). 10.1063/1.2977865
10. J. K. Jeong, H. W. Yang, J. H. Jeong, Y. G. Mo, and H. D. Kim, Appl. Phys. Lett. 0003-6951 93, 123508 (2008). 10.1063/1.2990657
11. J. S. Park, T. W. Kim, D. Stryakhilev, J. S. Lee, S. G. An, Y. S. Pyo, D. B. Lee, Y. G. Mo, D. J. Jin, and H. K. Chung, Appl. Phys. Lett. 0003-6951 95, 013503 (2009). 10.1063/1.3159832
12. D. D. J. Allman, K. P. Fuchs, J. M. Cuchiaro, and J. Vac. Sci. Technol. A 0734-2101 9, 485 (1991). 10.1116/1.577393
13. M. C. Hugon, F. Delmotte, and V. Agius, J. Vac. Sci. Technol. A 0734-2101 15, 3143 (1997). 10.1116/1.580859
14. S. C. Deshmukh and E. S. Aydil, J. Vac. Sci. Technol. B 1071-1023 14, 738 (1996). 10.1116/1.588707
15. T. Matsumoto, Y. Murata, and J. Watanabe, Appl. Phys. Lett. 0003-6951 60, 1942 (1992). 10.1063/1.107158
16. M. J. Powell, C. Van Berkel, I. D. French, and D. H. Nicholls, Appl. Phys. Lett. 0003-6951 51, 1242 (1987). 10.1063/1.98692
17. A. V. Gelatos and J. Kanicki, Appl. Phys. Lett. 0003-6951 57, 1197 (1990). 10.1063/1.103484
18. F. R. Libsch and J. Kanicki, Appl. Phys. Lett. 0003-6951 62, 1286 (1993). 10.1063/1.108709
19. Y. C. Park, W. B. Jackson, D. L. Smith, and N. M. Johnson, J. Appl. Phys. 0021-8979 74, 381 (1993). 10.1063/1.354121