Zinc indium oxide thin-film transistors for active-matrix display backplane

Digest of Technical Papers - SID International Symposium

Volumn 40, Issue 1, 2009, Pages 288-291

  Hoffman, Randy ^a   Emery, Tim ^a   Yeh, Bao ^a   Koch, Tim ^a   Jackson, Warren ^b  

^a HEWLETT PACKARD COMPANY   (United States)

^b HEWLETT PACKARD LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; DIELECTRIC MATERIALS; GATE DIELECTRICS; HAFNIUM OXIDES; INDIUM COMPOUNDS; TEMPERATURE; THIN FILM CIRCUITS; THIN FILMS;

ACTIVE MATRIX DISPLAYS; AMORPHOUS SI; BACKPLANES; BIAS STRESS; LOW-TEMPERATURE GATE DIELECTRIC; THIN-FILM TRANSISTOR (TFTS); THRESHOLD SHIFTS; ZINC INDIUM OXIDE;

THIN FILM TRANSISTORS;

EID: 84870725610     PISSN: 0097966X     EISSN: 21680159     Source Type: Conference Proceeding    
DOI: 10.1889/1.3256765     Document Type: Conference Paper

References (13)

1. S. Masuda et al, “Transparent thin film transistors using ZnO as an active channel layer and their electrical properties,” J. Appl. Phys. 93, 1624-1630, (2003).
2. R. Hoffman et al, “ZnO-based transparent thin-film transistors,” Appl. Phys. Lett. 82, 733-735, (2003).
3. P. Carcia et al, “Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering,” Appl. Phys. Lett. 82, 1117-1119, (2003).
4. K. Nomura et al, “Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors,” Nature 432, 488-492, (2004).
5. J. Jeong et al, “Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors,” Appl. Phys. Lett. 93, 123508, (2008).
6. H. Chiang et al, “High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer,” Appl. Phys. Lett. 86, 013503, (2005).
7. T. Riedl et al, “Ultra-high long-term stability of oxide-TTFTs under current stress,” phys. stat. sol. (RLL) 1, 175-177, (2007).
8. N. Dehuff et al, “Transparent thin film transistors with zinc indium oxide channel layer,” J. Appl. Phys. 97, 064505, (2005).
9. N. Itagaki et al, “Zn-In-O based thin-film transistors: Compositional dependence,” phys. stat. sol. (a) 205, 1915-1919, (2008).
10. R. Hoffman, “ZnO-channel thin-film transistors: Channel mobility,” J. Appl. Phys. 95, 5813-5819, (2004).
11. rd edition (Wiley, New Jersey, 2006).
12. C. Kagan and P. Andry, eds., Thin-Film Transistors (Marcel Dekker, New York, 2003).
13. Y. Kuo, ed., Thin-Film Transistors Materials and Processes, Volume 1: Amorphous Silicon Thin Film Transistors (Kluwer Academic Publishers, Boston, 2004).