Reliable bottom gate amorphous indium-gallium-zinc oxide thin-film transistors with TiOx passivation layer

Electrochemical and Solid-State Letters

Volumn 12, Issue 9, 2009, Pages

  Seo, Hyun Sik ^a,b   Bae, Jong Uk ^a   Kim, Dae Hwan ^a   Park, YuJin ^a   Kim, Chang Dong ^a   Kang, In Byeong ^a   Chung, In Jae ^a   Choi, Ji Hyuk ^b   Myoung, Jae Min ^b  

^a LG Display Co Ltd   (South Korea)

^b Yonsei University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BOTTOM GATE; OXYGEN PLASMA TREATMENTS; OXYGEN PLASMAS; PASSIVATION LAYER; SOURCE-DRAIN ELECTRODES; SUBTHRESHOLD SLOPE; THERMAL TREATMENT; TIO;

GALLIUM; HEAT TREATMENT; INDIUM; LEAKAGE (FLUID); OXYGEN; PLASMA APPLICATIONS; PLASMAS; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM DEVICES; THIN FILM TRANSISTORS; TITANIUM; TITANIUM OXIDES; ZINC; ZINC OXIDE;

PASSIVATION;

EID: 67651230706     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3168522     Document Type: Article

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