Amorphous In-Ga-Zn-O thin-film transistor with coplanar homojunction structure

Thin Solid Films

Volumn 518, Issue 4, 2009, Pages 1309-1313

  Sato, Ayumu ^a   Shimada, Mikio ^a   Abe, Katsumi ^a   Hayashi, Ryo ^a   Kumomi, Hideya ^a   Nomura, Kenji ^b   Kamiya, Toshio ^b   Hirano, Masahiro ^b   Hosono, Hideo ^b  

^a CANON INC   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Amorphous; Oxides; Semiconductors; TFT; Transparent

Indexed keywords

AMORPHOUS OXIDES; CHANNEL RESISTANCE; DRAIN RESISTANCES; ELECTRICAL STRESS; ENVIRONMENT CHANGE; FIELD-EFFECT MOBILITIES; GOOD STABILITY; HOMOJUNCTION; HYDROGENATED SILICON; LOW RESISTIVITY; OFF CURRENT; OUTPUT CHARACTERISTICS; SOURCE AND DRAINS; SUBTHRESHOLD SWING;

SEMICONDUCTING ORGANIC COMPOUNDS; SILICON NITRIDE; THIN FILM DEVICES; THIN FILM TRANSISTORS; TRANSISTORS; ZINC;

AMORPHOUS FILMS;

EID: 71649115815     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.01.165     Document Type: Article

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