Surface-induced time-dependent instability of ZnO based thin-film transistors

Thin Solid Films

Volumn 517, Issue 23, 2009, Pages 6345-6348

  Kim, Ki tae ^a   Lee, Kimoon ^a   Oh, Min Suk ^a   Park, C H ^a   Im, Seongil ^a  

^a Yonsei University   (South Korea)

Author keywords

Instability; Interdigitated structure; Surface; Thin film transistor; ZnO

Indexed keywords

BACK CHANNELS; BOTTOM GATE; CORE-LEVEL PEAKS; DE-IONIZED WATER; ELECTRICAL INSTABILITY; ENERGY-BAND BENDING; INSTABILITY; INTERDIGITATED STRUCTURE; PASSIVATION LAYER; SURFACE STATE; THIN-FILM TRANSISTOR; TIME-DEPENDENT; VALENCE-BAND MAXIMUMS; X RAY PHOTOEMISSION SPECTROSCOPY; ZNO; ZNO SURFACE;

BINDING ENERGY; CONTACT ANGLE; ELECTRIC POTENTIAL; EMISSION SPECTROSCOPY; PASSIVATION; SEMICONDUCTING ORGANIC COMPOUNDS; STABILITY; SURFACE STRUCTURE; THIN FILM DEVICES; THIN FILM TRANSISTORS; TRANSISTORS; ZINC; ZINC OXIDE;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 68349091584     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.02.093     Document Type: Article

References (19)

1. Fortunato E.M.C., Barquinha P.M.C., Pimentel A.C.M.B.G., Gonçalves A.M.F., Marques A.J.S., Pereira L.M.N., and Martins R.F.P. Adv. Mater. 17 (2005) 590
2. Oh M.S., Hwang D.K., Lee K., and Im S. Appl. Phys. Lett. 90 (2007) 153511
3. Barquinha P., Fortunato E., Gonçalves A.A., Pimentel A., Marques A., Pereira L., and Martins R. Superlattices Microstruct. 39 (2006) 319
4. Hirschwald W.H. Acc. Chem. Res. 18 (1985) 228
5. Azároff L.V. Introduction to solids (1960), McGraw-Hill Book Company, New York 371
6. Tam K.H., Cheung C.K., Leung Y.H., Djurišić A.B., Ling C.C., Beling C.D., Fung S., Kwok W.M., Chan W.K., Phillips D.L., Ding L., and Ge W.K. J. Phys. Chem., B 110 (2006) 20865
7. Kresse G., Dulub O., and Diebold U. Phys. Rev. B. 68 (2003) 245409
8. Wander A., and Harrison N.M. J. Chem. Phys. 115 (2001) 2312
9. V.E. Henrich, P.A. Cox, The surface science of metal oxide, Cambridge University Press, Cambridge, 1994, pp. 255-269, pp. 296-301.
10. Bae H.S., and Im S. J. Vac. Sci. Technol., B 22 (2004) 1191
11. Frank J., Fleischer M., and Meixner H. Sens. Actuators, B, Chem. 48 (1998) 318
12. Savran C.A., Burg T.P., Fritz J., and Manalis S.R. Appl. Phys. Lett. 83 (2003) 1659
13. Sciuto A., Roccaforte F., Di Franco S., and Raineri V. Appl. Phys. Lett. 89 (2006) 081111
14. Wu T.-T., and Wang W.-S. J. Appl. Phys. 96 (2004) 5249
15. Coppa B.J., Fulton C.C., Hartlieb P.J., and Davis R.F. J. Appl. Phys. 95 (2004) 5856
16. Ye Z.Z., Zeng Y.J., Lu Y.F., Lin S.S., Sun L., Zhu L.P., and Zhao B.H. Appl. Phys. Lett. 91 (2007) 112110
17. Park J.-S., Jeong J.K., Chung H.-J., Mo Y.-G., and Kim H.D. Appl. Phys. Lett. 92 (2008) 072104
18. Kang D., Lim H., Kim C., Song I., Park J., and Park Y. Appl. Phys. Lett. 90 (2007) 192101
19. Yan Y., and Al-Kassim M.M. Phys. Rev., B 72 (2005) 235406