Electrical instability of rf sputter amorphous In-Ga-Zn-O thin-film transistors

IEEE/OSA Journal of Display Technology

Volumn 5, Issue 12, 2009, Pages 452-461

  Fung, Tze Ching ^a   Abe, Katsumi ^b   Kumomi, Hideya ^b   Kanicki, Jerzy ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

^b CANON INC   (Japan)

Author keywords

A IGZO; Amorphous semiconductors; Bias temperature stress (BTS); Semiconductor device reliability; Transparent; Transparent thin film transistor(TFT)

Indexed keywords

BIAS TEMPERATURE STRESS; CHANNEL CHARGE; CHARACTERISTIC TEMPERATURE; DEFECT STATE; ELECTRICAL INSTABILITY; EXPONENTIAL EQUATIONS; NEGATIVE VOLTAGE; SEMICONDUCTOR DEVICE RELIABILITY; STATE DENSITIES; STRESS VOLTAGES; TEMPERATURE DEPENDENCE; TEMPERATURE STRESS; THRESHOLD VOLTAGE SHIFTS; TIME EVOLUTIONS; TRANSPARENT THIN FILM TRANSISTOR;

AMORPHOUS FILMS; AMORPHOUS SEMICONDUCTORS; DIELECTRIC RELAXATION; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR SWITCHES; THIN FILM DEVICES; THIN FILM TRANSISTORS; THRESHOLD VOLTAGE; ZINC;

TRANSISTORS;

EID: 70450210334     PISSN: 1551319X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JDT.2009.2020611     Document Type: Article

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