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Journal of the Electrochemical Society

Volumn 157, Issue 2, 2010, Pages

Atomic layer deposition ZnO:N thin film transistor: The effects of N concentration on the device properties

(6) Lim, S J a Kim, Jae Min b Kim, Doyoung b Kwon, Soonju a Park, Jin Seong c Kim, Hyungjun b

a Pohang University of Science and Technology (POSTECH) (South Korea)

b Yonsei University (South Korea)

c Dankook University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE CHANNEL LAYERS; ACTIVE LAYER; DC BIAS; DEVICE PROPERTIES; ELECTRICAL PROPERTY; HIGH-NITROGEN; N CONTENT; NITROGEN CONCENTRATIONS; NITROGEN INCORPORATION; NITROGEN-DOPED; NITROGEN-DOPING; POLY(ETHYLENE NAPHTHALATE); SINGLE SOURCE; ZNO;

CONCENTRATION (PROCESS); DEPOSITION; DOPING (ADDITIVES); ELECTRIC PROPERTIES; ETHYLENE; THIN FILM TRANSISTORS; THIN FILMS; ZINC OXIDE;

NITROGEN;

EID: 73849118524 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3269973 Document Type: Article

Times cited : (63)

References (20)

1
- 16244382410
- Fully transparent ZnO thin-film transistor produced at room temperature
- DOI 10.1002/adma.200400368
- E. M. C. Fortunato, P. M. C. Barquinha, A. C. M. B. G. Pimental, A. M. F. Goņalves, A. J. S. Marques, L. M. N. Pereira, and R. F. P. Martins, Adv. Mater. 0935-9648, 17, 590 (2005). 10.1002/adma.200400368 (Pubitemid 40448713)
- (2005) Advanced Materials , vol.17 , Issue.5 , pp. 590-594
- Fortunato, E.M.C.¹ Barquinha, P.M.C.² Pimentel, A.C.M.B.G.³ Goncalves, A.M.F.⁴ Marques, A.J.S.⁵ Pereira, L.M.N.⁶ Martins, R.F.P.⁷

2
- 34247326380
- Recent progress in transparent oxide semiconductors: Materials and device application
- DOI 10.1016/j.tsf.2006.12.125, PII S0040609006015677
- H. Hosono, Thin Solid Films 0040-6090, 515, 6000 (2007). 10.1016/j.tsf.2006.12.125 (Pubitemid 46635591)
- (2007) Thin Solid Films , vol.515 , Issue.15 SPEC. ISS. , pp. 6000-6014
- Hosono, H.¹

3
- 23744515183
- 7 gate insulator for transparent and flexible electronics
- DOI 10.1063/1.1993762, 043509
- I. -D. Kim, Y. Choi, and H. L. Tuller, Appl. Phys. Lett. 0003-6951, 87, 043509 (2005). 10.1063/1.1993762 (Pubitemid 41118001)
- (2005) Applied Physics Letters , vol.87 , Issue.4 , pp. 1-3
- Kim, I.-D.¹ Choi, Y.² Tuller, H.L.³

4
- 4344680665
- Recent progress in processing and properties of ZnO
- DOI 10.1016/S0749-6036(03)00093-4
- S. J. Pearton, D. P. Norton, K. Ip, Y. W. Heo, and T. Steiner, Superlattices Microstruct. 0749-6036, 34, 3 (2003). 10.1016/S0749-6036(03)00093- 4 (Pubitemid 40005673)
- (2003) Superlattices and Microstructures , vol.34 , Issue.1-2 , pp. 3-32
- Pearton, S.J.¹ Norton, D.P.² Ip, K.³ Heo, Y.W.⁴ Steiner, T.⁵

5
- 0037450269
- 0003-6951. 10.1063/1.1553997
- P. F. Carcia, R. S. McLean, M. H. Reilly, and J. G. Nunes, Appl. Phys. Lett. 0003-6951, 82, 1117 (2003). 10.1063/1.1553997
- (2003) Appl. Phys. Lett. , vol.82 , pp. 1117
- Carcia, P.F.¹ McLean, R.S.² Reilly, M.H.³ Nunes, J.G.⁴

6
- 33645542322
- 0003-6951. 10.1063/1.2188379
- P. F. Carcia, R. S. McLean, and M. H. Reilly, Appl. Phys. Lett. 0003-6951, 88, 123509 (2006). 10.1063/1.2188379
- (2006) Appl. Phys. Lett. , vol.88 , pp. 123509
- Carcia, P.F.¹ McLean, R.S.² Reilly, M.H.³

7
- 38349143370
- 0003-6951. 10.1063/1.2830940
- N. Huby, S. Ferrari, E. Guziewicz, M. Godlewski, and V. Osinniy, Appl. Phys. Lett. 0003-6951, 92, 023502 (2008). 10.1063/1.2830940
- (2008) Appl. Phys. Lett. , vol.92 , pp. 023502
- Huby, N.¹ Ferrari, S.² Guziewicz, E.³ Godlewski, M.⁴ Osinniy, V.⁵

8
- 34547916520
- 0003-966X.
- C. -S. Hwang, S. -H. K. Park, J. -I. Lee, S. M. Chung, Y. S. Yang, L. -M. Do, and H. Y. Chu, SID Int. Symp. Digest Tech. Papers 0003-966X, 38, 237 (2007).
- (2007) SID Int. Symp. Digest Tech. Papers , vol.38 , pp. 237
- Hwang, C.-S.¹ Park, S.-H.K.² Lee, J.-I.³ Chung, S.M.⁴ Yang, Y.S.⁵ Do, L.-M.⁶ Chu, H.Y.⁷

9
- 0037415828
- 0003-6951. 10.1063/1.1542677
- R. L. Hoffman, B. J. Norris, and J. F. Wager, Appl. Phys. Lett. 0003-6951, 82, 733 (2003). 10.1063/1.1542677
- (2003) Appl. Phys. Lett. , vol.82 , pp. 733
- Hoffman, R.L.¹ Norris, B.J.² Wager, J.F.³

10
- 0030232185
- 10.1143/JJAP.35.L1165 0021-8979
- H. Kawarada, M. Itoh, and A. Hokazono, J. Appl. Phys., Part 2, 35, L1165 (1996). 10.1143/JJAP.35.L1165 0021-8979
- (1996) J. Appl. Phys., Part 2 , vol.35 , pp. 1165
- Kawarada, H.¹ Itoh, M.² Hokazono, A.³

11
- 33244478727
- xO thin films as active channel layers of thin-film transistors
- DOI 10.1149/1.2168291
- J. Lee, P. Lin, J. Ho, and C. Lee, Electrochem. Solid-State Lett. 1099-0062, 9, G117 (2006). 10.1149/1.2168291 (Pubitemid 43278087)
- (2006) Electrochemical and Solid-State Letters , vol.9 , Issue.4
- Lee, J.H.¹ Lin, P.² Ho, J.C.³ Lee, C.C.⁴

12
- 33746299203
- 1-xO channel
- DOI 10.1143/JJAP.45.L694
- A. Ohtomo, S. Takagi, K. Tamura, T. Makino, Y. Segawa, H. Kionuma, and M. Kawasaki, J. Appl. Phys., Part 2, 45, L694 (2006). 10.1143/JJAP.45.L694 0021-8979 (Pubitemid 44106946)
- (2006) Japanese Journal of Applied Physics, Part 2: Letters , vol.45 , Issue.24-28
- Ohtomo, A.¹ Takagi, S.² Tamura, K.³ Makino, T.⁴ Segawa, Y.⁵ Koinuma, H.⁶ Kawasaki, M.⁷

13
- 35649020699
- High performance thin film transistor with low temperature atomic layer deposition nitrogen-doped ZnO
- DOI 10.1063/1.2803219
- S. J. Lim, K. Soon-ju, K. Hyungjun, and P. Jin-Seong, Appl. Phys. Lett. 0003-6951, 91, 183517 (2007). 10.1063/1.2803219 (Pubitemid 350037253)
- (2007) Applied Physics Letters , vol.91 , Issue.18 , pp. 183517
- Lim, S.J.¹ Kwon, S.-J.² Kim, H.³ Park, J.-S.⁴

14
- 0004005306
- 2nd ed., Wiley Interscience, New York.
- S. M. Sze, Physics of Semiconductor Devices, 2nd ed., Wiley Interscience, New York (1981).
- (1981) Physics of Semiconductor Devices
- Sze, S.M.¹

15
- 33846965196
- Stability of transparent zinc tin oxide transistors under bias stress
- DOI 10.1063/1.2458457
- P. Görrn, P. Holzer, T. Riedl, W. Kowalsky, J. Wang, T. Weimann, P. Hinze, and S. Kipp, Appl. Phys. Lett. 0003-6951, 90, 063502 (2007). 10.1063/1.2458457 (Pubitemid 46247705)
- (2007) Applied Physics Letters , vol.90 , Issue.6 , pp. 063502
- Gorrn, P.¹ Holzer, P.² Riedl, T.³ Kowalsky, W.⁴ Wang, J.⁵ Weimann, T.⁶ Hinze, P.⁷ Kipp, S.⁸

16
- 51349141239
- 0003-6951. 10.1063/1.2977865
- J. -M. Lee, I. -T. Cho, J. -H. Lee, and H. -I. Kwon, Appl. Phys. Lett. 0003-6951, 93, 093504 (2008). 10.1063/1.2977865
- (2008) Appl. Phys. Lett. , vol.93 , pp. 093504
- Lee, J.-M.¹ Cho, I.-T.² Lee, J.-H.³ Kwon, H.-I.⁴

17
- 38549145327
- Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors
- DOI 10.1063/1.2824758
- A. Suresh and J. F. Muth, Appl. Phys. Lett. 0003-6951, 92, 033502 (2008). 10.1063/1.2824758 (Pubitemid 351160654)
- (2008) Applied Physics Letters , vol.92 , Issue.3 , pp. 033502
- Suresh, A.¹ Muth, J.F.²

18
- 37549040163
- 0003-6951. 10.1063/1.2825422
- Y. Vygranenko, K. Wang, and A. Nathan, Appl. Phys. Lett. 0003-6951, 91, 263508 (2007). 10.1063/1.2825422
- (2007) Appl. Phys. Lett. , vol.91 , pp. 263508
- Vygranenko, Y.¹ Wang, K.² Nathan, A.³

19
- 0042769335
- 0003-6951. 10.1063/1.1592621
- J. F. Rommelùre, L. Svob, F. Jomard, J. Mimila-Arroyo, A. Lusson, V. Sallet, and Y. Marfaing, Appl. Phys. Lett. 0003-6951, 83, 287 (2003). 10.1063/1.1592621
- (2003) Appl. Phys. Lett. , vol.83 , pp. 287
- Rommelùre, J.F.¹ Svob, L.² Jomard, F.³ Mimila-Arroyo, J.⁴ Lusson, A.⁵ Sallet, V.⁶ Marfaing, Y.⁷

20
- 0004071496
- 2nd ed., John Wiley & Sons, New York.
- D. K. Schroder, Semiconductor Material and Device Characterization, 2nd ed., John Wiley & Sons, New York (1998).
- (1998) Semiconductor Material and Device Characterization
- Schroder, D.K.¹

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