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Volumn 95, Issue 23, 2009, Pages

Environment-dependent metastability of passivation-free indium zinc oxide thin film transistor after gate bias stress

Author keywords

[No Author keywords available]

Indexed keywords

BACK CHANNELS; BIAS STRESS; DYNAMIC EQUILIBRIA; GATE-BIAS STRESS; INDIUM ZINC OXIDES; INITIAL VALUES; METASTABILITIES; STRESS VOLTAGES; THRESHOLD VOLTAGE SHIFTS;

EID: 71949116567     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3272016     Document Type: Article
Times cited : (229)

References (13)
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  • 5
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    • Nomura, K.1    Ohta, H.2    Takagi, A.3    Kamiya, T.4    Hirano, M.5    Hosono, H.6
  • 6
    • 34248399209 scopus 로고    scopus 로고
    • Amorphous gallium indium zinc oxide thin film transistors: Sensitive to oxygen molecules
    • DOI 10.1063/1.2723543
    • D. Kang, H. Lim, C. J. Kim, I. Song, J. C. Park, and Y. S. Park, Appl. Phys. Lett. 0003-6951 90, 192101 (2007). 10.1063/1.2723543 (Pubitemid 46738090)
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  • 7
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    • Electronic transport properties of amorphous indium-gallium-zinc oxide semiconductor upon exposure to water
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  • 8
    • 33750502434 scopus 로고    scopus 로고
    • Improvement of hydrogenated amorphous-silicon TFT performances with low-κ siloxane-based hydrogen silsesquioxane (HSQ) passivation layer
    • DOI 10.1109/LED.2006.884721
    • T. -S. Chang, T. -C. Chang, P. -T. Liu, T. -S. Chang, C. -H. Tu, and F. -S. Yeh, IEEE Electron Device Lett. 0741-3106 27, 902 (2006). 10.1109/LED.2006.884721 (Pubitemid 44660647)
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.