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Applied Physics Letters

Volumn 95, Issue 19, 2009, Pages

Mapping out the distribution of electronic states in the mobility gap of amorphous zinc tin oxide

(6) Erslev, Peter T a Sundholm, Eric S b Presley, Rick E b Hong, David b Wager, John F b Cohen, J David a

a UNIVERSITY OF OREGON (United States)

b 1148 Kelley Engineering Center Corvallis (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE PROFILING; DEFECT BANDS; ELECTRONIC STATE DISTRIBUTION; FREE CARRIER DENSITY; HIGH ELECTRON MOBILITY; MOBILITY GAP; MODULATED PHOTOCURRENT; PHOTOCAPACITANCE; URBACH ENERGY; WIDE BAND GAP; WIDE-BAND; ZINC TIN OXIDE;

CONDUCTION BANDS; ELECTRONIC STATES; HETEROJUNCTIONS; MODEL PREDICTIVE CONTROL; PHOTOCURRENTS; PREDICTIVE CONTROL SYSTEMS; TIN; ZINC;

ELECTRON MOBILITY;

EID: 70449711200 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3262962 Document Type: Article

Times cited : (48)

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