메뉴 건너뛰기




Volumn 3, Issue 4, 2010, Pages 2218-2259

Fabrication methods and luminescent properties of ZnO materials for light-emitting diodes

Author keywords

Conductive types; Defect states; Fabrication methods; Light emitting diodes; Luminescent properties; Nanostructured ZnO; ZnO thin film

Indexed keywords

CONDUCTIVE TYPES; DEFECT STATE; FABRICATION METHOD; LUMINESCENT PROPERTY; NANOSTRUCTURED ZNO; ZNO THIN FILM;

EID: 77956200157     PISSN: None     EISSN: 19961944     Source Type: Journal    
DOI: 10.3390/ma3042218     Document Type: Review
Times cited : (102)

References (160)
  • 2
    • 34548622769 scopus 로고    scopus 로고
    • ZnO: From basics towards applications
    • Klingshirn, C. ZnO: From basics towards applications. Phys. Stat. Sol. B 2007, 244, 3027-3073.
    • (2007) Phys. Stat. Sol. B , vol.244 , pp. 3027-3073
    • Klingshirn, C.1
  • 4
    • 0033691843 scopus 로고    scopus 로고
    • Hydrothermal growth of ZnO single crystals and their optical characterization
    • 214-215
    • Sekiguchi, T.; Miyashita, S.; Obara, K.; Shishido, T.; Sakagami, N. Hydrothermal growth of ZnO single crystals and their optical characterization. J. Cryst. Growth 2000, 214-215, 72-76.
    • (2000) J. Cryst. Growth , pp. 72-76
    • Sekiguchi, T.1    Miyashita, S.2    Obara, K.3    Shishido, T.4    Sakagami, N.5
  • 6
    • 0032672169 scopus 로고    scopus 로고
    • Growth mechanism and growth habit of oxide crystals
    • Li, W.J.; Shi, E.W.; Zhong, W.Z.; Yin, Z.W. Growth mechanism and growth habit of oxide crystals. J. Cryst. Growth 1999, 203, 186-196.
    • (1999) J. Cryst. Growth , vol.203 , pp. 186-196
    • Li, W.J.1    Shi, E.W.2    Zhong, W.Z.3    Yin, Z.W.4
  • 7
    • 0002736212 scopus 로고
    • Growth of ZnO single crystals by chemical vapour transport
    • Shiloh, M.; Gutman, J. Growth of ZnO single crystals by chemical vapour transport. J. Cryst. Growth 1971, 11, 105-109.
    • (1971) J. Cryst. Growth , vol.11 , pp. 105-109
    • Shiloh, M.1    Gutman, J.2
  • 8
    • 0025698303 scopus 로고
    • Crystal growth of ZnO by chemical transport using HgCl2 as a transport agent
    • Matsumoto, K.; Noda, K. Crystal growth of ZnO by chemical transport using HgCl2 as a transport agent. J. Cryst. Growth 1990, 102, 137-140.
    • (1990) J. Cryst. Growth , vol.102 , pp. 137-140
    • Matsumoto, K.1    Noda, K.2
  • 10
  • 12
    • 0023646601 scopus 로고
    • Effect of r.f. sputtering parameters on ZnO films deposited onto GaAs substrates
    • Lee, C.T.; Su, Y.K.; Wang, H.M. Effect of r.f. sputtering parameters on ZnO films deposited onto GaAs substrates. Thin Solid Films 1987, 150, 283-289.
    • (1987) Thin Solid Films , vol.150 , pp. 283-289
    • Lee, C.T.1    Su, Y.K.2    Wang, H.M.3
  • 13
    • 0024714786 scopus 로고
    • Dependence of ZnO films on sputtering parameters and SAW device on ZnO/InP
    • Lee, C.T.; Su, Y.K.; Chen, S.L. Dependence of ZnO films on sputtering parameters and SAW device on ZnO/InP. J. Cryst. Growth 1989, 96, 785-789.
    • (1989) J. Cryst. Growth , vol.96 , pp. 785-789
    • Lee, C.T.1    Su, Y.K.2    Chen, S.L.3
  • 14
    • 0000590113 scopus 로고    scopus 로고
    • Preferred orientation and piezoelectricity in sputtered ZnO films
    • Gardeniers, J.G.E.; Rittersma, Z.M.; Burger, G.J. Preferred orientation and piezoelectricity in sputtered ZnO films. J. Appl. Phys. 1998, 83, 7844-7854.
    • (1998) J. Appl. Phys. , vol.83 , pp. 7844-7854
    • Gardeniers, J.G.E.1    Rittersma, Z.M.2    Burger, G.J.3
  • 15
    • 0037883739 scopus 로고    scopus 로고
    • Photoluminescence dependence of ZnO films grown on Si(100) by radio-frequency magnetron sputtering on the growth ambient
    • Jeong, S.; Kim, B.; Lee, B. Photoluminescence dependence of ZnO films grown on Si(100) by radio-frequency magnetron sputtering on the growth ambient. Appl. Phys. Lett. 2003, 82, 2625-2627.
    • (2003) Appl. Phys. Lett. , vol.82 , pp. 2625-2627
    • Jeong, S.1    Kim, B.2    Lee, B.3
  • 17
    • 33947303513 scopus 로고    scopus 로고
    • Ultraviolet electroluminescence from ZnO/p-Si heterojunctions
    • Chen, P.L.; Ma, X.Y.; Yang, D.R. Ultraviolet electroluminescence from ZnO/p-Si heterojunctions. J. Appl. Phys. 2007, 101, 053103.
    • (2007) J. Appl. Phys. , vol.101 , pp. 053103
    • Chen, P.L.1    Ma, X.Y.2    Yang, D.R.3
  • 18
    • 54249104977 scopus 로고    scopus 로고
    • Properties of zinc oxide films cosputtered with aluminum at room temperature
    • Liu, D.S.; Tsai, F.C.; Lee, C.T.; Sheu, C.W. Properties of zinc oxide films cosputtered with aluminum at room temperature. Jpn. J. Appl. Phys. 2008, 47, 3056-3062.
    • (2008) Jpn. J. Appl. Phys. , vol.47 , pp. 3056-3062
    • Liu, D.S.1    Tsai, F.C.2    Lee, C.T.3    Sheu, C.W.4
  • 19
    • 42949156205 scopus 로고    scopus 로고
    • Investigation of optical and electrical properties of ZnO thin films
    • Lai, L.W.; Lee, C.T. Investigation of optical and electrical properties of ZnO thin films. Mater. Chem. Phys. 2008, 110, 393-396.
    • (2008) Mater. Chem. Phys. , vol.110 , pp. 393-396
    • Lai, L.W.1    Lee, C.T.2
  • 20
    • 34548028748 scopus 로고    scopus 로고
    • Aluminum-nitride codoped zinc oxide films prepared using a radio-frequency magnetron cosputtering system
    • Liu, D.S.; Sheu, C.S.; Lee, C.T. Aluminum-nitride codoped zinc oxide films prepared using a radio-frequency magnetron cosputtering system. J. Appl. Phys. 2007, 102, 033516.
    • (2007) J. Appl. Phys. , vol.102 , pp. 033516
    • Liu, D.S.1    Sheu, C.S.2    Lee, C.T.3
  • 22
    • 34547592702 scopus 로고    scopus 로고
    • Gallium-doped zinc oxide films as transparent electrodes for organic solar cell applications
    • Bhosle, V.; Prater, J.T.; Yang, F.; Burk, D.; Forrest, S.R.; Narayan, J. Gallium-doped zinc oxide films as transparent electrodes for organic solar cell applications. J. Appl. Phys. 2007, 102, 023501.
    • (2007) J. Appl. Phys. , vol.102 , pp. 023501
    • Bhosle, V.1    Prater, J.T.2    Yang, F.3    Burk, D.4    Forrest, S.R.5    Narayan, J.6
  • 24
    • 0000288835 scopus 로고    scopus 로고
    • Plasma assisted molecular beam epitaxy of ZnO on c -plane sapphire: Growth and characterization
    • Chen, Y.; Bagnall, D.M.; Koh, H.J.; Park, KT.; Hiraga, K.; Zhu, Z.Q.; Yao, T. Plasma assisted molecular beam epitaxy of ZnO on c -plane sapphire: Growth and characterization. J. Appl. Phys. 1998, 84, 3912-3918.
    • (1998) J. Appl. Phys. , vol.84 , pp. 3912-3918
    • Chen, Y.1    Bagnall, D.M.2    Koh, H.J.3    Park, K.T.4    Hiraga, K.5    Zhu, Z.Q.6    Yao, T.7
  • 27
    • 47249108458 scopus 로고    scopus 로고
    • Ultraviolet electroluminescence from n-ZnO:Ga/p-ZnO:N homojunction device on sapphire substrate with p-type ZnO:N layer formed by annealing in N2O plasma ambient
    • Sun, J.C.; Liang, H.W.; Zhao, J.Z.; Bian, J.M.; Feng, Q.J.; Hu, L.Z.; Zhang, H.Q.; Liang, X.P.; Luo, Y.M.; Du, G.T. Ultraviolet electroluminescence from n-ZnO:Ga/p-ZnO:N homojunction device on sapphire substrate with p-type ZnO:N layer formed by annealing in N2O plasma ambient. Chem. Phys. Lett. 2008, 460, 548-551.
    • (2008) Chem. Phys. Lett. , vol.460 , pp. 548-551
    • Sun, J.C.1    Liang, H.W.2    Zhao, J.Z.3    Bian, J.M.4    Feng, Q.J.5    Hu, L.Z.6    Zhang, H.Q.7    Liang, X.P.8    Luo, Y.M.9    Du, G.T.10
  • 29
    • 34250661148 scopus 로고    scopus 로고
    • Visual-infrared electroluminescence emission from ZnO/GaAs heterojunctions grown by metal-organic chemical vapor deposition
    • Du, G.; Cui, Y.G.; Xia, X.C.; Li, X.P.; Zhu, H.C.; Zhang, B.L.; Zhang, Y.T.; Ma, Y. Visual-infrared electroluminescence emission from ZnO/GaAs heterojunctions grown by metal-organic chemical vapor deposition. Appl. Phys. Lett. 2007, 90, 243504.
    • (2007) Appl. Phys. Lett. , vol.90 , pp. 243504
    • Du, G.1    Cui, Y.G.2    Xia, X.C.3    Li, X.P.4    Zhu, H.C.5    Zhang, B.L.6    Zhang, Y.T.7    Ma, Y.8
  • 30
    • 53849093027 scopus 로고    scopus 로고
    • Room temperature electroluminescence from ZnO/Si heterojunction devices grown by metal-organic chemical vapor deposition
    • Li, X.P.; Zhang, B.L.; Dong, X.; Zhang, Y.T.; Xia, X.C.; Zhao, W.; Du, G.T. Room temperature electroluminescence from ZnO/Si heterojunction devices grown by metal-organic chemical vapor deposition. J. Lumin. 2009, 129, 86-89.
    • (2009) J. Lumin. , vol.129 , pp. 86-89
    • Li, X.P.1    Zhang, B.L.2    Dong, X.3    Zhang, Y.T.4    Xia, X.C.5    Zhao, W.6    Du, G.T.7
  • 31
    • 65249094328 scopus 로고    scopus 로고
    • Site-controlled growth and field emission properties of ZnO nanorod arrays
    • Zhang, Y.; Lee, C.T. Site-controlled growth and field emission properties of ZnO nanorod arrays. J. Phys. Chem. C 2009, 113, 5920-5923.
    • (2009) J. Phys. Chem. C , vol.113 , pp. 5920-5923
    • Zhang, Y.1    Lee, C.T.2
  • 32
    • 67649232748 scopus 로고    scopus 로고
    • Morphology control and electroluminescence of ZnO nanorod/GaN heterojunctions prepared using aqueous solution
    • Lee, S.D.; Kim, Y.S.; Yi, M.S.; Choi, J.Y.; Kim, S.W. Morphology control and electroluminescence of ZnO nanorod/GaN heterojunctions prepared using aqueous solution. J. Phys. Chem. C 2009, 113, 8954-8958.
    • (2009) J. Phys. Chem. C , vol.113 , pp. 8954-8958
    • Lee, S.D.1    Kim, Y.S.2    Yi, M.S.3    Choi, J.Y.4    Kim, S.W.5
  • 33
    • 33846785060 scopus 로고    scopus 로고
    • Synthesis and defect-related emission of ZnO based light emitting device with homo- and heterostructure
    • Bian, J.M.; Liu, W.F.; Sun, J.C.; Liang, H.W. Synthesis and defect-related emission of ZnO based light emitting device with homo- and heterostructure. J. Mater. Process. Technol. 2007, 184, 451-454.
    • (2007) J. Mater. Process. Technol. , vol.184 , pp. 451-454
    • Bian, J.M.1    Liu, W.F.2    Sun, J.C.3    Liang, H.W.4
  • 35
    • 44449125818 scopus 로고    scopus 로고
    • p-ZnO/n-Si heterojunction: Sol-gel fabrication, photoresponse properties, and transport mechanism
    • Dutta, M; Basak, D. p-ZnO/n-Si heterojunction: Sol-gel fabrication, photoresponse properties, and transport mechanism. Appl. Phys. Lett. 2008, 92, 212112.
    • (2008) Appl. Phys. Lett. , vol.92 , pp. 212112
    • Dutta, M.1    Basak, D.2
  • 36
    • 43949138685 scopus 로고    scopus 로고
    • Deposition of non-polar a-axis nanocrystalline ZnO thin films for light emitting applications
    • Bhole, M.P.; Patil, D.S. Deposition of non-polar a-axis nanocrystalline ZnO thin films for light emitting applications. Optoelectron. Adv. Mater.-Rapid commun. 2007, 1, 672.
    • (2007) Optoelectron. Adv. Mater.-Rapid commun. , vol.1 , pp. 672
    • Bhole, M.P.1    Patil, D.S.2
  • 37
    • 45149089650 scopus 로고    scopus 로고
    • Effects of Mg incorporation on the optical properties of ZnO prepared by the sol-gel method
    • Lin, Y.J.; Wu, P.H.; Tsai, C.L.; Liu, C.J.; Lin, Z.R.; Chang, H.C.; Lee, C.T. Effects of Mg incorporation on the optical properties of ZnO prepared by the sol-gel method. J. Appl. Phys. 2008, 103, 113709.
    • (2008) J. Appl. Phys. , vol.103 , pp. 113709
    • Lin, Y.J.1    Wu, P.H.2    Tsai, C.L.3    Liu, C.J.4    Lin, Z.R.5    Chang, H.C.6    Lee, C.T.7
  • 39
    • 36849056500 scopus 로고    scopus 로고
    • ZnO-on-GaN heterojunction light-emitting diode grown by vapor cooling condensation technique
    • Chuang, R.W.; Wu, R.X.; Lai, L.W.; Lee, C.T. ZnO-on-GaN heterojunction light-emitting diode grown by vapor cooling condensation technique. Appl. Phys. Lett. 2007, 91, 231113.
    • (2007) Appl. Phys. Lett. , vol.91 , pp. 231113
    • Chuang, R.W.1    Wu, R.X.2    Lai, L.W.3    Lee, C.T.4
  • 40
    • 31544443237 scopus 로고    scopus 로고
    • A transparent and conductive film prepared by RF magnetron cosputtering system at room temperature
    • Liu, D.S.; Wu, C.C.; Lee, C.T. A transparent and conductive film prepared by RF magnetron cosputtering system at room temperature. Jpn. J. App. Phys. 2005, 44, 5119-5121.
    • (2005) Jpn. J. App. Phys. , vol.44 , pp. 5119-5121
    • Liu, D.S.1    Wu, C.C.2    Lee, C.T.3
  • 42
    • 3242720421 scopus 로고    scopus 로고
    • ZnMgO epilayers and ZnO-ZnMgO quantum wells for optoelectronic applications in the blue and UV spectral region
    • Gruber, T.; Kirchner, C.; Kling, R.; Reuss, F.; Waag, A. ZnMgO epilayers and ZnO-ZnMgO quantum wells for optoelectronic applications in the blue and UV spectral region. Appl. Phys. Lett. 2004, 84, 5359-5361.
    • (2004) Appl. Phys. Lett. , vol.84 , pp. 5359-5361
    • Gruber, T.1    Kirchner, C.2    Kling, R.3    Reuss, F.4    Waag, A.5
  • 46
    • 19744380391 scopus 로고    scopus 로고
    • Dependence of structural and optical properties of Zn1-xCdxO films on the Cd composition
    • Ma, D.W.; Ye, Z.Z.; Chen, L.L. Dependence of structural and optical properties of Zn1-xCdxO films on the Cd composition. Phys. Stat. Sol. A 2004, 201, 2929-2933.
    • (2004) Phys. Stat. Sol. A , vol.201 , pp. 2929-2933
    • Ma, D.W.1    Ye, Z.Z.2    Chen, L.L.3
  • 48
    • 0014577305 scopus 로고
    • Luminescent transitions associated with divalent copper impurities and the green emission from semiconducting Zinc Oxide
    • Dingle, R. Luminescent transitions associated with divalent copper impurities and the green emission from semiconducting Zinc Oxide. Phys. Rev. Lett. 1969, 23, 579-581.
    • (1969) Phys. Rev. Lett. , vol.23 , pp. 579-581
    • Dingle, R.1
  • 51
    • 1142292373 scopus 로고    scopus 로고
    • Annealing effect on the property of ultraviolet and green emissions of ZnO thin films
    • Kang, H.S.; Kang, J.S.; Kim, J.W.; Lee, S.Y. Annealing effect on the property of ultraviolet and green emissions of ZnO thin films. J. Appl. Phys. 2003, 95, 1246-1250.
    • (2003) J. Appl. Phys. , vol.95 , pp. 1246-1250
    • Kang, H.S.1    Kang, J.S.2    Kim, J.W.3    Lee, S.Y.4
  • 52
    • 33947315446 scopus 로고    scopus 로고
    • The role of oxygen vacancies in epitaxial-deposited ZnO thin films
    • Shan, F.K.; Liu, G.X.; Lee, W.J.; Shin, B.C. The role of oxygen vacancies in epitaxial-deposited ZnO thin films. J. Appl. Phys. 2007, 101, 053106.
    • (2007) J. Appl. Phys. , vol.101 , pp. 053106
    • Shan, F.K.1    Liu, G.X.2    Lee, W.J.3    Shin, B.C.4
  • 53
    • 0035356847 scopus 로고    scopus 로고
    • Fine structure on the green band in ZnO
    • Reynolds, D.C.; Look, D.C.; Jogai, B. Fine structure on the green band in ZnO. J. Appl. Phys. 2001, 89, 6189-6191.
    • (2001) J. Appl. Phys. , vol.89 , pp. 6189-6191
    • Reynolds, D.C.1    Look, D.C.2    Jogai, B.3
  • 54
    • 27144519231 scopus 로고    scopus 로고
    • Origin of green luminescence in ZnO thin film grown by molecular-beam epitaxy
    • Heo, Y.W.; Norton, D.P.; Pearton, S.J. Origin of green luminescence in ZnO thin film grown by molecular-beam epitaxy. J. Appl. Phys. 2005, 98, 073502.
    • (2005) J. Appl. Phys. , vol.98 , pp. 073502
    • Heo, Y.W.1    Norton, D.P.2    Pearton, S.J.3
  • 58
    • 68149089864 scopus 로고    scopus 로고
    • Nitrogen function of aluminum-nitride codoped ZnO films deposited using cosputter system
    • Lai, L.W.; Yan, J.T.; Chen, C.H.; Lou, L.R.; Lee, C.T. Nitrogen function of aluminum-nitride codoped ZnO films deposited using cosputter system. J. Mater. Res. 2009, 24, 2252-2258.
    • (2009) J. Mater. Res. , vol.24 , pp. 2252-2258
    • Lai, L.W.1    Yan, J.T.2    Chen, C.H.3    Lou, L.R.4    Lee, C.T.5
  • 59
    • 33847617916 scopus 로고    scopus 로고
    • Effects of processing parameters on ultraviolet emission of In-doped ZnO nanodisks grown by carbothermal reduction
    • Lin, P.F.; Ko, C.Y.; Lin, W.T.; Lee, C.T. Effects of processing parameters on ultraviolet emission of In-doped ZnO nanodisks grown by carbothermal reduction. Mater. Lett. 2007, 61, 1767-1770.
    • (2007) Mater. Lett. , vol.61 , pp. 1767-1770
    • Lin, P.F.1    Ko, C.Y.2    Lin, W.T.3    Lee, C.T.4
  • 61
    • 20144369109 scopus 로고    scopus 로고
    • Optical detection of electron paramagnetic resonance in room-temperature electron-irradiated ZnO
    • Vlasenko, L.S.; Watkins, G.D. Optical detection of electron paramagnetic resonance in room-temperature electron-irradiated ZnO. Phys. Rev. B 2005, 71, 125210.
    • (2005) Phys. Rev. B , vol.71 , pp. 125210
    • Vlasenko, L.S.1    Watkins, G.D.2
  • 62
    • 45249100389 scopus 로고    scopus 로고
    • Defect energetics in ZnO: A hybrid Hartree-Fock density functional study
    • Oba, F.; Togo, A.; Tanaka, I.; Paier, J.; Kresse, G. Defect energetics in ZnO: A hybrid Hartree-Fock density functional study. Phys. Rev. B 2008, 77, 245202.
    • (2008) Phys. Rev. B , vol.77 , pp. 245202
    • Oba, F.1    Togo, A.2    Tanaka, I.3    Paier, J.4    Kresse, G.5
  • 64
    • 0035855080 scopus 로고    scopus 로고
    • Green luminescent center in undoped zinc oxide films deposited on silicon substrates
    • Lin, B.X.; Fu, Z.X.; Jia, Y.B. Green luminescent center in undoped zinc oxide films deposited on silicon substrates. Appl. Phys. Lett. 2001, 79, 943-945.
    • (2001) Appl. Phys. Lett. , vol.79 , pp. 943-945
    • Lin, B.X.1    Fu, Z.X.2    Jia, Y.B.3
  • 65
    • 0242664727 scopus 로고    scopus 로고
    • Photoluminescence of polycrystalline ZnO under different annealing conditions
    • Hur, T.B.; Jeen, G.S.; Hwang, Y.H.; Kim, H.Y. Photoluminescence of polycrystalline ZnO under different annealing conditions. J. Appl. Phys. 2003, 94, 5787-5790.
    • (2003) J. Appl. Phys. , vol.94 , pp. 5787-5790
    • Hur, T.B.1    Jeen, G.S.2    Hwang, Y.H.3    Kim, H.Y.4
  • 68
    • 0001649616 scopus 로고    scopus 로고
    • First-principles study of native point defects in ZnO
    • Kohan, A.F.; Ceder, G.; Morgan, D.; Van de Walle, C.G. First-principles study of native point defects in ZnO. Phys. Rev. B 2000, 61, 15019-15027.
    • (2000) Phys. Rev. B , vol.61 , pp. 15019-15027
    • Kohan, A.F.1    Ceder, G.2    Morgan, D.3    Van de Walle, C.G.4
  • 70
    • 33750503989 scopus 로고    scopus 로고
    • Role of defects in ferromagnetism in Zn1-xCoxO: A hybrid density-functional study
    • Patterson, C.H. Role of defects in ferromagnetism in Zn1-xCoxO: A hybrid density-functional study. Phys. Rev. B 2006, 74, 144432.
    • (2006) Phys. Rev. B , vol.74 , pp. 144432
    • Patterson, C.H.1
  • 71
    • 54849432627 scopus 로고    scopus 로고
    • Electronic structures of defects in ZnO: Hybrid density functional studies
    • Hu, J.; Pan, B.C. Electronic structures of defects in ZnO: Hybrid density functional studies. J. Chem. Phys. 2008, 129, 154706.
    • (2008) J. Chem. Phys. , vol.129 , pp. 154706
    • Hu, J.1    Pan, B.C.2
  • 73
    • 0347687117 scopus 로고    scopus 로고
    • Zinc self-diffusion, electrical properties, and defect structure of undoped single crystal zinc oxide
    • Tomlins, G.W.; Routbort, J.L.; Mason, T.O. Zinc self-diffusion, electrical properties, and defect structure of undoped single crystal zinc oxide. J. Appl. Phys. 2000, 87, 117-123.
    • (2000) J. Appl. Phys. , vol.87 , pp. 117-123
    • Tomlins, G.W.1    Routbort, J.L.2    Mason, T.O.3
  • 74
  • 75
    • 33846519391 scopus 로고    scopus 로고
    • Dopability, intrinsic conductivity, and nonstoichiometry of transparent conducting oxides
    • Lany, S.; Zunger, A. Dopability, intrinsic conductivity, and nonstoichiometry of transparent conducting oxides. Phys. Rev. Lett. 2007, 98, 045501.
    • (2007) Phys. Rev. Lett. , vol.98 , pp. 045501
    • Lany, S.1    Zunger, A.2
  • 76
    • 2342456342 scopus 로고    scopus 로고
    • First-principles calculations for defects and impurities: Applications to III-nitrides
    • Van de Walle, C.G.; Neugebauer, J. First-principles calculations for defects and impurities: Applications to III-nitrides. J. Appl. Phys. 2004, 95, 3851-3879.
    • (2004) J. Appl. Phys. , vol.95 , pp. 3851-3879
    • Van de Walle, C.G.1    Neugebauer, J.2
  • 78
    • 0002536769 scopus 로고
    • Concentration of hydrogen and semi-conductivity in ZnO under hydrogen-ion bombardment
    • Lander, J.J. Concentration of hydrogen and semi-conductivity in ZnO under hydrogen-ion bombardment. J. Phys. Chem. Solids 1957, 3, 87-94.
    • (1957) J. Phys. Chem. Solids , vol.3 , pp. 87-94
    • Lander, J.J.1
  • 80
    • 33749233582 scopus 로고    scopus 로고
    • Anion vacancies as a source of persistent photoconductivity in II-VI and chalcopyrite semiconductors
    • Lany, S.; Zunger, A. Anion vacancies as a source of persistent photoconductivity in II-VI and chalcopyrite semiconductors. Phys. Rev. B 2005, 72, 035215.
    • (2005) Phys. Rev. B , vol.72 , pp. 035215
    • Lany, S.1    Zunger, A.2
  • 81
    • 0000257064 scopus 로고
    • ESR of electron irradiated ZnO confirmation of the F+ center
    • Smith, J.M.; Vehse, W.E. ESR of electron irradiated ZnO confirmation of the F+ center. Phys. Lett. A 1970, 31,147-148.
    • (1970) Phys. Lett. A , vol.31 , pp. 147-148
    • Smith, J.M.1    Vehse, W.E.2
  • 82
    • 0017012735 scopus 로고
    • Photosensitivity of the EPR spectrum of the F+ center in ZnO
    • Soriano, V.; Galland, D. Photosensitivity of the EPR spectrum of the F+ center in ZnO. Phys. Status Solidi B 1976, 77, 739-743.
    • (1976) Phys. Status Solidi B , vol.77 , pp. 739-743
    • Soriano, V.1    Galland, D.2
  • 83
    • 37749000442 scopus 로고    scopus 로고
    • Effects of growth temperature on Li-N dual-doped p-type ZnO thin films prepared by pulsed laser deposition
    • Zhang, Y.Z.; Lu, J.G.; Ye, Z.Z.; He, H.P.; Zhu, L.P.; Zhao, B.H.; Wan, L. Effects of growth temperature on Li-N dual-doped p-type ZnO thin films prepared by pulsed laser deposition. Appl. Surf. Sci. 2008, 254, 1993-1996.
    • (2008) Appl. Surf. Sci. , vol.254 , pp. 1993-1996
    • Zhang, Y.Z.1    Lu, J.G.2    Ye, Z.Z.3    He, H.P.4    Zhu, L.P.5    Zhao, B.H.6    Wan, L.7
  • 86
    • 39049157193 scopus 로고    scopus 로고
    • Deposition of K-doped p type ZnO thin films on (0001) Al2O3 substrates
    • Wu, J.; Yang, Y.T. Deposition of K-doped p type ZnO thin films on (0001) Al2O3 substrates. Mater. Lett. 2008, 62, 1899-1901.
    • (2008) Mater. Lett. , vol.62 , pp. 1899-1901
    • Wu, J.1    Yang, Y.T.2
  • 87
    • 57749102566 scopus 로고    scopus 로고
    • Fabrication and characterization of K-H co-doped p-ZnO thin films
    • Wu, J.; Yang, Y.T. Fabrication and characterization of K-H co-doped p-ZnO thin films. J. Comput. Theor. Nanosci. 2008, 5, 1743-1745.
    • (2008) J. Comput. Theor. Nanosci. , vol.5 , pp. 1743-1745
    • Wu, J.1    Yang, Y.T.2
  • 89
    • 41949116170 scopus 로고    scopus 로고
    • Correlation between electrical, optical properties and Ag2+ centers of ZnO:Ag thin films
    • Deng, R.; Zou, Y.M.; Tang, H.G. Correlation between electrical, optical properties and Ag2+ centers of ZnO:Ag thin films. Physica B 2008, 403, 2004-2007.
    • (2008) Physica B , vol.403 , pp. 2004-2007
    • Deng, R.1    Zou, Y.M.2    Tang, H.G.3
  • 90
    • 33646871377 scopus 로고    scopus 로고
    • Structural electrical, and optical properties of p-type ZnO thin films with Ag dopant
    • Kang, H.S.; Ahn, B.D.; Kim, J.H.; Kim, G.H.; Lim, S.H.; Chang, H.W.; Lee, S.Y. Structural, electrical, and optical properties of p-type ZnO thin films with Ag dopant. Appl. Phys. Lett. 2006, 88, 202108.
    • (2006) Appl. Phys. Lett. , vol.88 , pp. 202108
    • Kang, H.S.1    Ahn, B.D.2    Kim, J.H.3    Kim, G.H.4    Lim, S.H.5    Chang, H.W.6    Lee, S.Y.7
  • 91
    • 33745020877 scopus 로고    scopus 로고
    • Enhancement of ultraviolet emissions from ZnO films by Ag doping
    • Duan, L.; Lin, B.X.; Zhang, W.Y.; Zhong, S.; Fu, Z.X. Enhancement of ultraviolet emissions from ZnO films by Ag doping. Appl. Phys. Lett. 2006, 88, 232110.
    • (2006) Appl. Phys. Lett. , vol.88 , pp. 232110
    • Duan, L.1    Lin, B.X.2    Zhang, W.Y.3    Zhong, S.4    Fu, Z.X.5
  • 92
    • 0037104275 scopus 로고    scopus 로고
    • Origin of p-type doping difficulty in ZnO: The impurity perspective
    • Park, C.H.; Zhang, S.B.; Wei, S.H. Origin of p-type doping difficulty in ZnO: The impurity perspective. Phys. Rev. B 2002, 66, 073202.
    • (2002) Phys. Rev. B , vol.66 , pp. 073202
    • Park, C.H.1    Zhang, S.B.2    Wei, S.H.3
  • 93
    • 56949090703 scopus 로고    scopus 로고
    • Codoped (AlN) and monodoped (Al) ZnO thin films grown by RF sputtering: A comparative study
    • Bhuvana, K.P.; Elanchezhiyan, J.; Gopalakrishnan, N.; Balasubramanian, T. Codoped (AlN) and monodoped (Al) ZnO thin films grown by RF sputtering: A comparative study. Appl. Surf. Sci. 2008, 255, 2026-2029.
    • (2008) Appl. Surf. Sci. , vol.255 , pp. 2026-2029
    • Bhuvana, K.P.1    Elanchezhiyan, J.2    Gopalakrishnan, N.3    Balasubramanian, T.4
  • 96
    • 53049096369 scopus 로고    scopus 로고
    • Unexpected influence of substrate temperature on the properties of P-doped ZnO
    • Hu, G.X.; Gong, H. Unexpected influence of substrate temperature on the properties of P-doped ZnO. Acta Mater. 2008, 56, 5066-5070.
    • (2008) Acta Mater , vol.56 , pp. 5066-5070
    • Hu, G.X.1    Gong, H.2
  • 100
    • 29144449332 scopus 로고    scopus 로고
    • Photoluminescence study of Sb-doped p-type ZnO films by molecular-beam epitaxy
    • Xiu, F.X.; Yang, Z.; Mandalapu, L.J.; Zhao, D.T.; Liu, J.L. Photoluminescence study of Sb-doped p-type ZnO films by molecular-beam epitaxy. Appl. Phys. Lett. 2005, 87, 252102.
    • (2005) Appl. Phys. Lett. , vol.87 , pp. 252102
    • Xiu, F.X.1    Yang, Z.2    Mandalapu, L.J.3    Zhao, D.T.4    Liu, J.L.5
  • 101
    • 42349086120 scopus 로고    scopus 로고
    • Sb-doped p-ZnO/Ga-doped n-ZnO homojunction ultraviolet light emitting diodes
    • Chu, S.; Lim, J.H.; Mandalapu, L.J.; Yang, Z.; Li, L.; Liu, J.L. Sb-doped p-ZnO/Ga-doped n-ZnO homojunction ultraviolet light emitting diodes. Appl. Phys. Lett. 2008, 92, 152103.
    • (2008) Appl. Phys. Lett. , vol.92 , pp. 152103
    • Chu, S.1    Lim, J.H.2    Mandalapu, L.J.3    Yang, Z.4    Li, L.5    Liu, J.L.6
  • 102
    • 0037668142 scopus 로고    scopus 로고
    • Optical properties and electrical characterization of p-type ZnO thin films prepared by thermally oxiding Zn3N2 thin films
    • Li, B.S.; Liu, Y.C.; Zhi, Z.Z.; Shen, D.Z.; Lu, Y.M.; Zhang, J.Y.; Fan, X.W.; Mu, R.X.; Henderson, D.O. Optical properties and electrical characterization of p-type ZnO thin films prepared by thermally oxiding Zn3N2 thin films. J. Mater. Res. 2003, 18, 8-13.
    • (2003) J. Mater. Res. , vol.18 , pp. 8-13
    • Li, B.S.1    Liu, Y.C.2    Zhi, Z.Z.3    Shen, D.Z.4    Lu, Y.M.5    Zhang, J.Y.6    Fan, X.W.7    Mu, R.X.8    Henderson, D.O.9
  • 103
    • 27844546755 scopus 로고    scopus 로고
    • Preparation of intrinsic and N-doped p-type ZnO thin films by metalorganic vapor phase epitaxy
    • Du, G.T.; Ma, Y.; Zhang, Y.T.; Yang, T.P. Preparation of intrinsic and N-doped p-type ZnO thin films by metalorganic vapor phase epitaxy. Appl. Phys. Lett. 2005, 87, 213103.
    • (2005) Appl. Phys. Lett. , vol.87 , pp. 213103
    • Du, G.T.1    Ma, Y.2    Zhang, Y.T.3    Yang, T.P.4
  • 104
    • 22844447614 scopus 로고    scopus 로고
    • Electrical and structural properties of p-type ZnO:N thin films prepared by plasma enhanced chemical vapour deposition
    • Xiao, Z.Y.; Liu, Y.C.; Zhang, J.Y.; Zhao, D.X.; Lu, Y.M.; Shen, D.Z.; Fan, X.W. Electrical and structural properties of p-type ZnO:N thin films prepared by plasma enhanced chemical vapour deposition. Semicond. Sci. Technol. 2005, 20, 796-800.
    • (2005) Semicond. Sci. Technol. , vol.20 , pp. 796-800
    • Xiao, Z.Y.1    Liu, Y.C.2    Zhang, J.Y.3    Zhao, D.X.4    Lu, Y.M.5    Shen, D.Z.6    Fan, X.W.7
  • 105
    • 20344406506 scopus 로고    scopus 로고
    • Growth of nitrogen-doped p-type ZnO films by spray pyrolysis and their electrical and optical properties
    • Zhao, J.L.; Li, X.M.; Bian, J.M.; Yu, W.D.; Zhang, C.Y. Growth of nitrogen-doped p-type ZnO films by spray pyrolysis and their electrical and optical properties. J. Cryst. Growth 2005, 280, 495-501.
    • (2005) J. Cryst. Growth , vol.280 , pp. 495-501
    • Zhao, J.L.1    Li, X.M.2    Bian, J.M.3    Yu, W.D.4    Zhang, C.Y.5
  • 106
    • 33744809266 scopus 로고    scopus 로고
    • Low-resistivity, stable p-type ZnO thin films realized using a Li-N dual-acceptor doping method
    • Lu, J.G.; Zhang, Y.Z.; Ye, Z.Z.; Zhu, L.P.; Wang, L.; Zhao, B.H.; Liang, Q.L. Low-resistivity, stable p-type ZnO thin films realized using a Li-N dual-acceptor doping method. Appl. Phys. Lett. 2006, 88, 222114.
    • (2006) Appl. Phys. Lett. , vol.88 , pp. 222114
    • Lu, J.G.1    Zhang, Y.Z.2    Ye, Z.Z.3    Zhu, L.P.4    Wang, L.5    Zhao, B.H.6    Liang, Q.L.7
  • 107
    • 3042855138 scopus 로고    scopus 로고
    • Properties of nitrogen-implanted p-type ZnO films grown on Si3N4/Si by radio-frequency magnetron sputtering
    • Lin, C.C.; Chen, S.Y.; Cheng, S.Y.; Lee, H.Y. Properties of nitrogen-implanted p-type ZnO films grown on Si3N4/Si by radio-frequency magnetron sputtering. Appl. Phys. Lett. 2004, 84, 5040-5042.
    • (2004) Appl. Phys. Lett. , vol.84 , pp. 5040-5042
    • Lin, C.C.1    Chen, S.Y.2    Cheng, S.Y.3    Lee, H.Y.4
  • 108
    • 33646396516 scopus 로고    scopus 로고
    • Electrical characterization of p-type N-doped ZnO films prepared by thermal oxidation of sputtered Zn3N2 films
    • Nakano, Y.; Morikawa, T.; Ohwaki, T.; Taga, Y. Electrical characterization of p-type N-doped ZnO films prepared by thermal oxidation of sputtered Zn3N2 films. Appl. Phys. Lett. 2006, 88, 172103.
    • (2006) Appl. Phys. Lett. , vol.88 , pp. 172103
    • Nakano, Y.1    Morikawa, T.2    Ohwaki, T.3    Taga, Y.4
  • 109
    • 0142095019 scopus 로고    scopus 로고
    • p-Type ZnO thin films prepared by oxidation of Zn3N2 thin films deposited by DC magnetron sputtering
    • Wang, C.; Ji, Z.G.; Liu, K.; Xiang, Y.; Ye, Z.Z. p-Type ZnO thin films prepared by oxidation of Zn3N2 thin films deposited by DC magnetron sputtering. J. Cryst. Growth 2003, 259, 279-281.
    • (2003) J. Cryst. Growth , vol.259 , pp. 279-281
    • Wang, C.1    Ji, Z.G.2    Liu, K.3    Xiang, Y.4    Ye, Z.Z.5
  • 110
    • 33748877561 scopus 로고    scopus 로고
    • Nitrogen-doped p-type ZnO films prepared from nitrogen gas radiofrequency magnetron sputtering
    • Tu, M.L.; Su, Y.K.; Ma, C.Y. Nitrogen-doped p-type ZnO films prepared from nitrogen gas radiofrequency magnetron sputtering. J. Appl. Phys. 2006, 100, 053705.
    • (2006) J. Appl. Phys. , vol.100 , pp. 053705
    • Tu, M.L.1    Su, Y.K.2    Ma, C.Y.3
  • 111
    • 0032634780 scopus 로고    scopus 로고
    • Solution using a codoping method to unipolarity for the fabrication of p-type ZnO
    • Yamamoto, T.; Katayama-Yoshida, H. Solution using a codoping method to unipolarity for the fabrication of p-type ZnO. Jpn. J. Appl. Phys. 1999, 38, L166-169.
    • (1999) Jpn. J. Appl. Phys. , vol.38
    • Yamamoto, T.1    Katayama-Yoshida, H.2
  • 113
    • 1242285028 scopus 로고    scopus 로고
    • Deposition and electrical properties of N-In codoped p-type ZnO films by ultrasonic spray pyrolysis
    • Bian, J.M.; Li, X.M.; Gao, X.D.; Yu, W.D.; Chen, L.D. Deposition and electrical properties of N-In codoped p-type ZnO films by ultrasonic spray pyrolysis. Appl. Phys. Lett. 2004, 84, 541-543.
    • (2004) Appl. Phys. Lett. , vol.84 , pp. 541-543
    • Bian, J.M.1    Li, X.M.2    Gao, X.D.3    Yu, W.D.4    Chen, L.D.5
  • 115
    • 24644520315 scopus 로고    scopus 로고
    • p-type ZnO films by codoping of nitrogen and aluminum and ZnO-based p-n homojunctions
    • Lu, J.G.; Zhu, L.P.; Ye, Z.Z.; Zhuge, F.; Zhao, B.H.; Huang, J.Y.; Wang, L.; Yuan, J. p-type ZnO films by codoping of nitrogen and aluminum and ZnO-based p-n homojunctions. J. Cryst. Growth 2005, 283, 413-417.
    • (2005) J. Cryst. Growth , vol.283 , pp. 413-417
    • Lu, J.G.1    Zhu, L.P.2    Ye, Z.Z.3    Zhuge, F.4    Zhao, B.H.5    Huang, J.Y.6    Wang, L.7    Yuan, J.8
  • 117
    • 36849056999 scopus 로고    scopus 로고
    • Preparation of p-type ZnO films with (N Ga) Co-doping by MOVPE
    • Wang, H.; Ho, H.P.; Lo, K.C.; Cheah, K.W. Preparation of p-type ZnO films with (N, Ga) Co-doping by MOVPE. Mater. Chem. Phys. 2008, 107, 244-147
    • (2008) Mater. Chem. Phys. , vol.107 , pp. 244-147
    • Wang, H.1    Ho, H.P.2    Lo, K.C.3    Cheah, K.W.4
  • 118
    • 40149089679 scopus 로고    scopus 로고
    • Electroluminescence from ZnO nanowires with a p-ZnO film/n-ZnO nanowire homojunction
    • Sun, H.; Zhang, Q.; Zhang, J.; Deng, T.; Wu, J. Electroluminescence from ZnO nanowires with a p-ZnO film/n-ZnO nanowire homojunction. Appl. Phys. B 2008, 90, 543-546.
    • (2008) Appl. Phys. B , vol.90 , pp. 543-546
    • Sun, H.1    Zhang, Q.2    Zhang, J.3    Deng, T.4    Wu, J.5
  • 120
    • 68149089864 scopus 로고    scopus 로고
    • Nitrogen function of aluminum-nitride codoped ZnO films deposited using cosputter system
    • Lai, L.W.; Yan, J.T.; Chen, C.H.; Lou, L.R.; Lee, C.T. Nitrogen function of aluminum-nitride codoped ZnO films deposited using cosputter system. J. Mater. Res. 2009, 24, 2252-2258.
    • (2009) J. Mater. Res. , vol.24 , pp. 2252-2258
    • Lai, L.W.1    Yan, J.T.2    Chen, C.H.3    Lou, L.R.4    Lee, C.T.5
  • 122
    • 1642634588 scopus 로고    scopus 로고
    • Fabrication and application potential of ZnO nanowires grown on GaAs(002) substrates by metal-organic chemical vapour deposition
    • Lee, W.; Jeong, M.C.; Myoung, J.M. Fabrication and application potential of ZnO nanowires grown on GaAs(002) substrates by metal-organic chemical vapour deposition. Nanotechnology 2004, 15, 254.
    • (2004) Nanotechnology , vol.15 , pp. 254
    • Lee, W.1    Jeong, M.C.2    Myoung, J.M.3
  • 124
    • 0037022372 scopus 로고    scopus 로고
    • Low-temperature growth of well-aligned ZnO nanorods by chemical vapor deposition
    • Wu. J.J.; Liu, S.C. Low-temperature growth of well-aligned ZnO nanorods by chemical vapor deposition. Adv. Mater. 2002, 14, 215-218.
    • (2002) Adv. Mater. , vol.14 , pp. 215-218
    • Liu, J.J.1    Wu, S.C.2
  • 125
    • 33746544257 scopus 로고    scopus 로고
    • Characterization of ZnO nanorod arrays fabricated on Si wafers using a low-temperature synthesis method
    • Tak, Y.; Park, D.; Yong, K. Characterization of ZnO nanorod arrays fabricated on Si wafers using a low-temperature synthesis method. J. Vac. Sci. Technol. B 2006, 24, 2047-2052.
    • (2006) J. Vac. Sci. Technol. B , vol.24 , pp. 2047-2052
    • Tak, Y.1    Park, D.2    Yong, K.3
  • 126
    • 35548994526 scopus 로고    scopus 로고
    • Free exciton emission and dephasing in individual ZnO nanowires
    • Zhang, Y.; Chen, D.J.; Lee, C.T. Free exciton emission and dephasing in individual ZnO nanowires. Appl. Phys. Lett. 2007, 91, 161911.
    • (2007) Appl. Phys. Lett. , vol.91 , pp. 161911
    • Zhang, Y.1    Chen, D.J.2    Lee, C.T.3
  • 127
    • 33749999507 scopus 로고    scopus 로고
    • Ultraviolet photodetectors with ZnO nanowires prepared on ZnO:Ga/glass templates
    • Lu, C.Y.; Chang, S.J.; Chang, S.P.; Lee, C.T.; Kuo, C.F.; Chang, H.M. Ultraviolet photodetectors with ZnO nanowires prepared on ZnO:Ga/glass templates. Appl. Phys. Lett. 2006, 89, 153101.
    • (2006) Appl. Phys. Lett. , vol.89 , pp. 153101
    • Lu, C.Y.1    Chang, S.J.2    Chang, S.P.3    Lee, C.T.4    Kuo, C.F.5    Chang, H.M.6
  • 128
    • 14544300579 scopus 로고    scopus 로고
    • Origin of ultraviolet photoluminescence in ZnO quantum dots: Confined excitons versus surface-bound impurity exciton complexes
    • Fonoberov, V.A.; Balandin, A.A. Origin of ultraviolet photoluminescence in ZnO quantum dots: Confined excitons versus surface-bound impurity exciton complexes. Appl. Phys. Lett. 2004, 85, 5971-5973.
    • (2004) Appl. Phys. Lett. , vol.85 , pp. 5971-5973
    • Fonoberov, V.A.1    Balandin, A.A.2
  • 129
    • 18144429501 scopus 로고    scopus 로고
    • Effect of exciton-phonon coupling in the calculated optical absorption of carbon nanotubes
    • Perebeinos, V.; Tersoff, J.; Avouris, Ph. Effect of exciton-phonon coupling in the calculated optical absorption of carbon nanotubes. Phys. Rev. Lett. 2005, 94, 027402.
    • (2005) Phys. Rev. Lett. , vol.94 , pp. 027402
    • Perebeinos, V.1    Tersoff, J.2    Avouris, P.3
  • 132
    • 0041824099 scopus 로고
    • Preparation and characterization of quantum size zinc oxide: A detailed spectroscopic study
    • Bahnemann, D.W.; Kormann, C.; Hoffmann, M.R. Preparation and characterization of quantum size zinc oxide: A detailed spectroscopic study. J. Phys. Chem.1987, 91, 3789-3798.
    • (1987) J. Phys. Chem , vol.91 , pp. 3789-3798
    • Bahnemann, D.W.1    Kormann, C.2    Hoffmann, M.R.3
  • 133
    • 20844459926 scopus 로고    scopus 로고
    • Ultraviolet lasing and time-resolved photoluminescence of well-aligned ZnO nanorod arrays
    • Han, X.H.; Wang, G.Z.; Wang, Q.T.; Cao, L.; Liu, R.B. Zou, B.G.; Hou, J.G. Ultraviolet lasing and time-resolved photoluminescence of well-aligned ZnO nanorod arrays. Appl. Phys. Lett. 2005, 86, 223106.
    • (2005) Appl. Phys. Lett. , vol.86 , pp. 223106
    • Han, X.H.1    Wang, G.Z.2    Wang, Q.T.3    Cao, L.4    Liu, R.B.5    Zou, B.G.6    Hou, J.G.7
  • 139
    • 33748486928 scopus 로고    scopus 로고
    • Room temperature defect related electroluminescence from ZnO homojunctions grown by ultrasonic spray pyrolysis
    • Du, G.T.; Liu, W.F.; Bian, J.M.; Hu, L.Z.; Liang, H.W.; Wang, X.S.; Liu A.M.; Yang, T.P. Room temperature defect related electroluminescence from ZnO homojunctions grown by ultrasonic spray pyrolysis. Appl. Phys. Lett. 2006, 89, 052113.
    • (2006) Appl. Phys. Lett. , vol.89 , pp. 052113
    • Du, G.T.1    Liu, W.F.2    Bian, J.M.3    Hu, L.Z.4    Liang, H.W.5    Wang, X.S.6    Liu, A.M.7    Yang, T.P.8
  • 140
    • 0346936441 scopus 로고    scopus 로고
    • Optical properties of ZnO/GaN heterostructure and its near-ultraviolet light-emitting diode
    • Yu, Q.X.; Xu, B.; Wu, Q.H.; Liao, Y.; Wang, G.Z.; Fang, R.C.; Lee, H.Y.; Lee, C.T. Optical properties of ZnO/GaN heterostructure and its near-ultraviolet light-emitting diode. Appl. Phys. Lett. 2003, 83, 4713-4715.
    • (2003) Appl. Phys. Lett. , vol.83 , pp. 4713-4715
    • Yu, Q.X.1    Xu, B.2    Wu, Q.H.3    Liao, Y.4    Wang, G.Z.5    Fang, R.C.6    Lee, H.Y.7    Lee, C.T.8
  • 142
    • 67650446167 scopus 로고    scopus 로고
    • Ultraviolet electroluminescence from ZnO/NiO-based heterojunction light-emitting diodes
    • Long, H.; Fang, G.; Huang, H.; Mo, X.; Xia, W.; Dong, B.; Meng, X.; Zhao, X. Ultraviolet electroluminescence from ZnO/NiO-based heterojunction light-emitting diodes. Appl. Phys. Lett. 2009, 95, 013509.
    • (2009) Appl. Phys. Lett. , vol.95 , pp. 013509
    • Long, H.1    Fang, G.2    Huang, H.3    Mo, X.4    Xia, W.5    Dong, B.6    Meng, X.7    Zhao, X.8
  • 144
    • 51349146917 scopus 로고    scopus 로고
    • A hybrid green light-emitting diode comprised of n-ZnO/(InGaN/GaN) multi-quantum-wells/p-GaN
    • Bayram, C.; Teherani, F.H.; Rogers, D.J.; Razeghi1, M. A hybrid green light-emitting diode comprised of n-ZnO/(InGaN/GaN) multi-quantum-wells/p-GaN. Appl. Phys. Lett. 2008, 93, 081111.
    • (2008) Appl. Phys. Lett. , vol.93 , pp. 081111
    • Bayram, C.1    Teherani, F.H.2    Rogers, D.J.3    Razeghi1, M.4
  • 146
    • 41349108266 scopus 로고    scopus 로고
    • Ultraviolet emission from Sb-doped p-type ZnO based heterojunction light-emitting diodes
    • Mandalapu, L.J.; Yang, Z.; Chu, S.; Liu, J.L. Ultraviolet emission from Sb-doped p-type ZnO based heterojunction light-emitting diodes. Appl. Phys. Lett. 2008, 92, 122101.
    • (2008) Appl. Phys. Lett. , vol.92 , pp. 122101
    • Mandalapu, L.J.1    Yang, Z.2    Chu, S.3    Liu, J.L.4
  • 147
    • 41049100051 scopus 로고    scopus 로고
    • Phosphorus doped ZnO light emitting diodes fabricated via pulsed laser deposition
    • Kim, H.S.; Lugo, F.; Pearton, S.J.; Norton, D.P.; Wang, Y.L.; Ren, F. Phosphorus doped ZnO light emitting diodes fabricated via pulsed laser deposition. Appl. Phys. Lett. 2008, 92, 112108.
    • (2008) Appl. Phys. Lett. , vol.92 , pp. 112108
    • Kim, H.S.1    Lugo, F.2    Pearton, S.J.3    Norton, D.P.4    Wang, Y.L.5    Ren, F.6
  • 149
    • 55849088744 scopus 로고    scopus 로고
    • Electrically pumped ultraviolet ZnO diode lasers on Si
    • Chu, S.; Olmedo, M.; Yang, Z.; Kong, J.Y.; Liu, J.L. Electrically pumped ultraviolet ZnO diode lasers on Si. Appl. Phys. Lett. 2008, 93, 181106.
    • (2008) Appl. Phys. Lett. , vol.93 , pp. 181106
    • Chu, S.1    Olmedo, M.2    Yang, Z.3    Kong, J.Y.4    Liu, J.L.5
  • 150
    • 33748703127 scopus 로고    scopus 로고
    • Fairly pure ultraviolet electroluminescence from ZnO-based light-emitting devices
    • Chen, P.L.; Ma, X.Y.; Yang D.R. Fairly pure ultraviolet electroluminescence from ZnO-based light-emitting devices. Appl. Phys. Lett. 2006, 89, 111112.
    • (2006) Appl. Phys. Lett. , vol.89 , pp. 111112
    • Chen, P.L.1    Ma, X.Y.2    Yang, D.R.3
  • 151
    • 37549044639 scopus 로고    scopus 로고
    • Electrically pumped ZnO film ultraviolet random lasers on silicon substrate
    • Ma, X.Y.; Chen, P.L.; Li, D.S.; Zhang, Y.Y.; Yang, D.R. Electrically pumped ZnO film ultraviolet random lasers on silicon substrate. Appl. Phys. Lett. 2007, 91, 251109.
    • (2007) Appl. Phys. Lett. , vol.91 , pp. 251109
    • Ma, X.Y.1    Chen, P.L.2    Li, D.S.3    Zhang, Y.Y.4    Yang, D.R.5
  • 152
    • 58149170319 scopus 로고    scopus 로고
    • A p-n homojunction ZnO nanorod light-emitting diode formed by As ion implantation
    • Yang, Y.; Sun, X.W.; Tay, B.K.; You, G.F.; Tan, S.T.; Teo, K.L. A p-n homojunction ZnO nanorod light-emitting diode formed by As ion implantation. Appl. Phys. Lett. 2008, 93, 253107.
    • (2008) Appl. Phys. Lett. , vol.93 , pp. 253107
    • Yang, Y.1    Sun, X.W.2    Tay, B.K.3    You, G.F.4    Tan, S.T.5    Teo, K.L.6
  • 153
    • 33646889389 scopus 로고    scopus 로고
    • Electroluminescence from ZnO nanowires in n-ZnO film/ZnO nanowire array/p-GaN film heterojunction light-emitting diodes
    • Jeong, M.C.; Oh, B.Y.; Ham, M.H.; Myounga, J.M. Electroluminescence from ZnO nanowires in n-ZnO film/ZnO nanowire array/p-GaN film heterojunction light-emitting diodes. Appl. Phys. Lett. 2006, 88, 202105.
    • (2006) Appl. Phys. Lett. , vol.88 , pp. 202105
    • Jeong, M.C.1    Oh, B.Y.2    Ham, M.H.3    Myounga, J.M.4
  • 154
  • 155
    • 27544506106 scopus 로고    scopus 로고
    • Ultraviolet electroluminescence from ZnO/polymer heterojunction light-emitting diodes
    • Ko1nenkamp, R.; Word, R.C.; Godinez, M. Ultraviolet electroluminescence from ZnO/polymer heterojunction light-emitting diodes. Nano Lett. 2005, 5, 2005-2008.
    • (2005) Nano Lett , vol.5 , pp. 2005-2008
    • Ko1nenkamp, R.1    Word, R.C.2    Godinez, M.3
  • 156
    • 67649159008 scopus 로고    scopus 로고
    • Exciton-related electroluminescence from ZnO nanowire light-emitting diodes
    • Zimmler, M.A.; Voss, T.; Ronning, C.; Capasso, F. Exciton-related electroluminescence from ZnO nanowire light-emitting diodes. Appl. Phys. Lett. 2009, 94, 241120.
    • (2009) Appl. Phys. Lett. , vol.94 , pp. 241120
    • Zimmler, M.A.1    Voss, T.2    Ronning, C.3    Capasso, F.4
  • 157
    • 33745833332 scopus 로고    scopus 로고
    • UV random lasing action in p-SiC(4H)/i-ZnO-SiO2 nanocomposite/n-ZnO:Al heterojunction diodes
    • Leong, E.S.P.; Yu, S.F. UV random lasing action in p-SiC(4H)/i-ZnO-SiO2 nanocomposite/n-ZnO:Al heterojunction diodes. Adv. Mater. 2006, 18, 1685-1688.
    • (2006) Adv. Mater. , vol.18 , pp. 1685-1688
    • Leong, E.S.P.1    Yu, S.F.2
  • 158
    • 77955447029 scopus 로고    scopus 로고
    • Mechanism investigation of p-i-n ZnO-based light-emitting diodes
    • Lee, C.T.; Lin, Y.H.; Lai, L.W.; Lou, L.R. Mechanism investigation of p-i-n ZnO-based light-emitting diodes. IEEE Photo. Technol. Lett. 2010, 22, 30-32.
    • (2010) IEEE Photo. Technol. Lett. , vol.22 , pp. 30-32
    • Lee, C.T.1    Lin, Y.H.2    Lai, L.W.3    Lou, L.R.4
  • 159
    • 75449105024 scopus 로고    scopus 로고
    • Ultraviolet ZnO nanorod/p-GaN heterostructured light-emitting diodes
    • Yan, J.T.; Chen, C.H.; Yen, S.F.; Lee, C.T. Ultraviolet ZnO nanorod/p-GaN heterostructured light-emitting diodes. IEEE Photo. Technol. Lett. 2010, 22, 146-148.
    • (2010) IEEE Photo. Technol. Lett. , vol.22 , pp. 146-148
    • Yan, J.T.1    Chen, C.H.2    Yen, S.F.3    Lee, C.T.4
  • 160
    • 68349133809 scopus 로고    scopus 로고
    • Light enhancement of Al nanoclusters embedded in Al-doped ZnO films of GaN-based light-emitting diodes
    • Lee, C.T.; Chou, Y. H.; Yan, J.T.; Lee, H.Y. Light enhancement of Al nanoclusters embedded in Al-doped ZnO films of GaN-based light-emitting diodes. J. Vac. Sci. Technol. B 2009, 27, 1901-1903.
    • (2009) J. Vac. Sci. Technol. B , vol.27 , pp. 1901-1903
    • Lee, C.T.1    Chou, Y.H.2    Yan, J.T.3    Lee, H.Y.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.