Ultraviolet ZnO nanorod/P-GaN-heterostructured light-emitting diodes

IEEE Photonics Technology Letters

Volumn 22, Issue 3, 2010, Pages 146-148

  Yan, Jheng Tai ^a   Chen, Chia Hsun ^a   Yen, Shiu Fang ^b   Lee, Ching Ting ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

Nanorod heterostructured light emitting diodes (LEDs); Space charge limited current; Vapor cooling condensation method; ZnO nanorod arrays

Indexed keywords

ANODIC ALUMINA MEMBRANES; CURRENT-VOLTAGE RELATIONSHIP; ELECTROLUMINESCENCE EMISSION; GAN LAYERS; NANOROD ARRAYS; NEAR BAND EDGE; POWER-LAW; RADIATIVE RECOMBINATION; SPACE-CHARGE-LIMITED CURRENT; ULTRAVIOLET EMISSION; ZNO; ZNO NANOROD; ZNO NANOROD ARRAYS;

CARRIER TRANSPORT; CONDENSATION; COOLING; DIODES; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES; VAPORS; ZINC OXIDE;

NANORODS;

EID: 75449105024     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2009.2037021     Document Type: Article

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