Optical properties of ZnO/GaN heterostructure and its near-ultraviolet light-emitting diode

Applied Physics Letters

Volumn 83, Issue 23, 2003, Pages 4713-4715

  Yu, Qing Xuan ^a   Xu, Bo ^a   Wu, Qi Hong ^a   Liao, Yuan ^a   Wang, Guan Zhong ^a   Fang, Rong Chuan ^a   Lee, Hsin Ying ^b   Lee, Ching Ting ^b  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRODES; ELECTROLUMINESCENCE; GALLIUM NITRIDE; HETEROJUNCTIONS; LIGHT ABSORPTION; METALLIZING; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; PHOTONS; QUANTUM EFFICIENCY; ZINC OXIDE;

EMISSION PEAKS; ENERGY POSITIONS; THERMOIONIC EMISSION;

LIGHT EMITTING DIODES;

EID: 0346936441     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1632029     Document Type: Article

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