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Volumn 84, Issue 7, 1998, Pages 3912-3918

Plasma assisted molecular beam epitaxy of ZnO on c-plane sapphire: Growth and characterization

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EID: 0000288835     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.368595     Document Type: Article
Times cited : (1411)

References (22)
  • 14
    • 36449003664 scopus 로고
    • Although coherent pseudomorphic epitaxy is impossible for such a large lattice mismatched system, a partial inhomogeneous strain can be involved in the epilayer
    • R. J. Hauenstein, D. A. Collins, X. P. Cai, M. L. O'Steen, and T. C. McGill, Appl. Phys. Lett. 66, 2861 (1995). Although coherent pseudomorphic epitaxy is impossible for such a large lattice mismatched system, a partial inhomogeneous strain can be involved in the epilayer.
    • (1995) Appl. Phys. Lett. , vol.66 , pp. 2861
    • Hauenstein, R.J.1    Collins, D.A.2    Cai, X.P.3    O'Steen, M.L.4    McGill, T.C.5
  • 16
    • 0016663944 scopus 로고
    • edited by J. W. Matthews Academic, New York, It is the intensity distribution in reciprocal space that corresponds directly to the measured intensity distribution. From Eq. (2), it can be seen that the line broadening due to the domain size is independent of the Bragg peak while the line broadening due to the inhomogeneous strain is proportional to the reciprocal lattice vector of the corresponding diffraction peak
    • R. W. Vook, in Epitaxial Growth, edited by J. W. Matthews (Academic, New York, 1975), p. 339. It is the intensity distribution in reciprocal space that corresponds directly to the measured intensity distribution. From Eq. (2), it can be seen that the line broadening due to the domain size is independent of the Bragg peak while the line broadening due to the inhomogeneous strain is proportional to the reciprocal lattice vector of the corresponding diffraction peak.
    • (1975) Epitaxial Growth , pp. 339
    • Vook, R.W.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.