Fabrication of p-type ZnO thin films using rf-magnetron sputter deposition

Electrochemical and Solid-State Letters

Volumn 12, Issue 4, 2009, Pages

  Kim, Jun Kwan ^a,b   Lim, Jung Wook ^b   Kim, Hyun Tak ^b   Kim, Sang Hoon ^b   Yun, Sun Jin ^a,b  

^a University of Science and Technology (UST)   (South Korea)

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRODEPOSITION; HOLE CONCENTRATION; OPTICAL FILMS; PHOSPHORUS; POLYSILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SILICON COMPOUNDS; SPUTTER DEPOSITION; THIN FILMS; ZINC OXIDE;

ANNEALING PROCESS; ANNEALING TEMPERATURES; CONCENTRATION OF; CONDUCTION TYPES; MAGNETRON SPUTTER DEPOSITIONS; MATERIAL CHARACTERISTICS; P-TYPE ZNO; SPUTTERING GAS; ZNO FILMS;

METALLIC FILMS;

EID: 60449114439     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3067756     Document Type: Article

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