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Journal of Crystal Growth

Volumn 280, Issue 3-4, 2005, Pages 495-501

Growth of nitrogen-doped p-type ZnO films by spray pyrolysis and their electrical and optical properties

(5) Zhao, Jun Liang a,b Li, Xiao Min a Bian, Ji Ming a,b Yu, Wei Dong a Zhang, Can Yun a,b

a SHANGHAI INSTITUTE OF CERAMICS (China)

b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES (China)

Author keywords

A1. Dope; A1. Growth mechanism; A3. Ultrasonic spray pyrolysis; B1. p type ZnO film

Indexed keywords

DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; HOLE MOBILITY; PHOTOLUMINESCENCE; PYROLYSIS; SEMICONDUCTING FILMS; ULTRASONICS;

DEEP LEVEL EMISSION; GROWTH MECHANISMS; ULTRASONIC SPRAY PYROLYSIS; WIDE BAND GAP SEMICONDUCTOR MATERIALS;

FILM GROWTH;

EID: 20344406506 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2005.03.079 Document Type: Article

Times cited : (58)

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