ZnO/GaN heterostructure for LED applications

Journal of Modern Optics

Volumn 56, Issue 5, 2009, Pages 653-660

  Titkov, I E ^a   Delimova, L A ^a   Zubrilov, A S ^a   Seredova, N V ^a   Liniichuk, I A ^a   Grekhov, I V ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

White electroluminescence; White LEDs; ZnO pulsed laser deposition

Indexed keywords

BAND DIAGRAMS; DRIVE CURRENTS; EMISSION LINES; HETEROSTRUCTURE; HIGH DENSITY; HIGH QUANTUM EFFICIENCY; INTENSITY RATIO; LED STRUCTURE; MOCVD; RECOMBINATION EMISSION; STRUCTURAL DEFECT; WHITE ELECTROLUMINESCENCE; WHITE LEDS; WHITE LIGHT; ZNO; ZNO FILMS; ZNO PULSED LASER DEPOSITION;

CHEMICAL VAPOR DEPOSITION; EMISSION SPECTROSCOPY; GALLIUM ALLOYS; GALLIUM NITRIDE; LASERS; LIGHT; LIGHT EMISSION; PULSED LASER DEPOSITION; SEMICONDUCTING GALLIUM; SEMICONDUCTING ZINC COMPOUNDS; ZINC; ZINC OXIDE;

ELECTROLUMINESCENCE;

EID: 67651229068     PISSN: 09500340     EISSN: 13623044     Source Type: Journal    
DOI: 10.1080/09500340902737051     Document Type: Article

References (19)

1. Shreter, Yu.G.; Rebane, Yu.T.; Zykov, V.A.; Sidorov, V.G. Wide Band Gap Semiconductors; Nauka: St Petersburg, 2001 [in Russian].
2. Davidenko, Yu. Sovremennaya Elektronika [Online] 2004. http://www.soel.ru/cms/f/?/311513.pdf
3. Kovalev, A.N.; Manyahin, F.I.; Kudryashov, V.E.; Turkin, A.N.; Yunovich, A.E. Semiconductors 1998, 32, 63-66.
4. Drizhuk, A.G.; Zaytsev, M.V.; Sidorov, V.G.; Sidorov, D.V. Tech. Phys. Lett. 1996, 22, 441-446.
5. Yan, Y.; Zhang, S.B.; Pantelides, S.T. Phys. Rev. Lett. 2001, 86, 5723-5726.
6. Ryu, Y.R.; Zhu, S; Look, D.C.; Wrobel, J.M.; Jeong, H.M.; White, H.W. J. Cryst. Growth 2000, 216, 330-334.
7. Joseph, M.; Tabata, H.; Saeki, H.; Ueda, K.; Kawai, T. Physica B 2001, 302-303, 140-148.
8. Aoki, T.; Hatanaka, Y.; Look, D.C. Appl. Phys. Lett. 2000, 76, 3257-3258.
9. Guo, X.-L.; Choi, J.-H.; Tabata, H.; Kawai, T. Jpn J. Appl. Phys. 2001, 40, L177-L180.
10. Yu, Q.-X.; Xu, B.; Wu, Q.-H.; Liao, Y.; Wang, G.-Z.; Fang, R.-C.; Lee, H.-Y.; Lee, C.-T. Appl. Phys. Lett. 2003, 83, 4713-4715.
11. Alivov, Ya.I.; Kalinina, E.V.; Cherenkov, A.E.; Look, D.C.; Ataev, B.M.; Omaev, A.K.; Chukichev, M.V.; Bagnall, D.M. Appl. Phys. Lett. 2003, 83, 4719-4721.
12. Ataev, B.M.; Alivov, Ya.I.; Kalinina, E.V.; Mamedov, V.V.; Onushkin, G.A.; Makhmudov, S.Sh.; Omaev, A.K. J. Cryst. Growth 2005, 275, e2471-e2474.
13. Il'yin, V.I.; Musikhin, S.F.; Shik, A.Ya. Graded Band-gap Semiconductors and Heterostructures; Nauka: St Petersburg, 2000 [in Russian].
14. Greshnov, A.A.; Bauman, D.M.; Ber, B.Y.; Chernyakov, A.E.; Kovarskyi, A.P.; Kovtunovich, A.M.; Shmidt, N.M.; Yavich, B.S.; Zakgeim, A.L. Comparative Study of Efficiency of InGaN/GaN MQW Light-emitting Diodes with Different Nanostructural Arrangement, Proceedings of the 14th International Symposium, 'Nanostructures: Physics and Technology', St. Petersburg, Russia, June 26-30, 2006, pp 242-243.
15. Ganichev, S.D.; Yassievich, I.N.; Prettle, V. Phys. Solid State 1997, 39, 1703-1726.
16. Bougrov, V.; Levinshtein, M.E.; Rumyantsev, S.L.; Zubrilov, A. In Properties of Advanced Semiconductor Materials GaN, AlN, InN, BN, SiC, SiGe: Levinshtein, M.E., Rumyantsev, S.L., Shur, M.S., Eds.; Wiley: New York, 2001; pp 1-30.
17. Nakamura, S.; Chichibu, S.F. Nitride Semiconductor Blue Lasers and Light Emitting Diodes; CRC Press: New York, 2000.
18. Lewis, L.; Casey, D.P.; Jeyaseelan, A.V.; Rohan, J.F.; Maaskant, P.P. Appl. Phys. Lett. 2008, 92, 062113-1-3.
19. Chen, L.-C.; Ho, Y.-M. J. Phys. D: Appl. Phys. 2007, 40, 6514-6517.