Nitrogen function of aluminum-nitride codoped ZnO films deposited using cosputter system

Journal of Materials Research

Volumn 24, Issue 7, 2009, Pages 2252-2258

  Lai, Li Wen ^a   Yan, Jheng Tai ^a   Chen, Chia Hsun ^a   Lou, Li Ren ^a   Lee, Ching Ting ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; BONDING CONFIGURATIONS; CO-DOPED ZNO; CONDUCTIVE BEHAVIOR; COSPUTTERING; CRYSTALLOGRAPHIC STRUCTURE; DEPOSITION CONDITIONS; FLOW RATIOS; LOW TEMPERATURE PHOTOLUMINESCENCE; LOW TEMPERATURES; NITROGEN AMBIENT; NITROGEN ATMOSPHERES; NITROGEN ATOM; P-TYPE; POST-ANNEALING TEMPERATURE; REDUCTION OF OXYGEN; SAPPHIRE SUBSTRATES; TIME-RESOLVED PHOTOLUMINESCENCE;

ALUMINA; ALUMINUM NITRIDE; BINDING ENERGY; CARRIER LIFETIME; CONDUCTIVE FILMS; CORUNDUM; METALLIC FILMS; NITRIDES; NITROGEN; OXYGEN; OXYGEN VACANCIES; PHOTOLUMINESCENCE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; ZINC; ZINC OXIDE;

ATMOSPHERIC TEMPERATURE;

EID: 68149089864     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/jmr.2009.0265     Document Type: Article

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