Properties of the oxygen vacancy in ZnO

Applied Physics A: Materials Science and Processing

Volumn 88, Issue 1, 2007, Pages 147-151

  Hofmann, D M ^a   Pfisterer, D ^a   Sann, J ^a   Meyer, B K ^a   Tena Zaera, R ^b   Munoz Sanjose, V ^b   Frank, T ^c   Pensl, G ^c  

^a JUSTUS LIEBIG UNIVERSITY   (Germany)

^b UNIVERSITY OF VALENCIA   (Spain)

^c UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CONDUCTION BANDS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; MAGNETIC RESONANCE SPECTROSCOPY; OXYGEN VACANCIES;

DONOR CONCENTRATION; METASTABLE LEVEL; VACANCY DEFECTS;

ZINC OXIDE;

EID: 34248569513     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-007-3956-2     Document Type: Article

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