Synthesis and defect-related emission of ZnO based light emitting device with homo- and heterostructure

Journal of Materials Processing Technology

Volumn 184, Issue 1-3, 2007, Pages 451-454

  Bian, Jiming ^a   Liu, Weifeng ^a   Sun, Jingchang ^a   Liang, Hongwei ^a  

^a Institute of Advanced Science and Technology   (China)

Author keywords

Electroluminescence; Light emitting devices; p n Junction; Ultrasonic spray pyrolysis; Zinc oxide films

Indexed keywords

ELECTRODES; ELECTROLUMINESCENCE; HETEROJUNCTIONS; SINGLE CRYSTALS; SYNTHESIS (CHEMICAL); ZINC OXIDE;

P-N JUNCTION; ULTRASONIC SPRAY PYROLYSIS; ZINC OXIDE FILMS;

LIGHT EMITTING DIODES;

EID: 33846785060     PISSN: 09240136     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jmatprotec.2006.12.011     Document Type: Article

References (13)

1. Service R.F. Will UV lasers beat the blues?. Science 276 (1997) 895
2. Look D.C. Electrical and optical properties of p-type ZnO. Semicond. Sci. Technol. 20 (2005) S55-S61
3. Look D.C., Claflin B., Alivov Ya.I., and Park S.J. The future of ZnO light emitters. Phys. Status Solidi (a) 201 (2004) 2203-2212
4. Tsukazaki A., Onuma T., Ohtani M., Makino T., Sumiya M., Ohtani K., Chichibu S.F., Fuke S., Segawa Y., Ohno H., Koinuma H., and Kawasaki M. Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO. Nat. Mater. 4 (2005) 42-46
5. Tsukazaki A., Kubota M., Ohtomo A., Onuma T., Ohtani K., Ohno H., Chichibu S.F., and Kawasaki M. Blue light-emitting diode based on ZnO. Jpn. J. Appl. Phys. 44 (2005) L643-L645
6. +-implanted bulk ZnO. Appl. Phys. Lett. 88 (2006) 102107
7. Xu W.Z., Ye Z.Z., Zeng Y.J., Zhu L.P., Zhao B.H., Jiang L., Lu J.G., He H.P., and Zhang S.B. ZnO light-emitting diode grown by plasma-assisted metal organic chemical vapor deposition. Appl. Phys. Lett. 88 (2006) 173506
8. Coleman V.A., Buda M., Tan H.H., Jagadish C., Phillips M.R., Koike K., Sasa S., Inoue M., and Yano M. Observation of blue shifts in ZnO/ZnMgO multiple quantum well structures by ion-implantation induced intermixing. Semicond. Sci. Technol. 21 (2006) L25-L28
9. 0.1O/ZnO p-n junctions grown by pulsed-laser deposition. Appl. Phys. Lett. 85 (2004) 1169-1171
10. Bian J.M., Li X.M., Gao X.D., Yu W.D., and Chen L.D. Deposition and electrical properties of N-In codoped p-type ZnO films by ultrasonic spray pyrolysis. Appl. Phys. Lett. 84 (2004) 541-543
11. Bian J.M., Li X.M., Zhang C.Y., Yu W.D., and Gao X.D. Synthesis and characterization of two-layer-structured ZnO p-n homojunctions by ultrasonic spray pyrolysis. Appl. Phys. Lett. 84 (2004) 3783-3785
12. xO films grown by ultrasonic spray pyrolysis. Appl. Phys. Lett. 87 (2005) 092101
13. Du G.T., Liu W.F., Bian J.M., Hu L.Z., Liang H.W., Wang X.S., Liu A.M., and Yang T.P. Room temperature defect related electroluminescence from ZnO homojunctions grown by ultrasonic spray pyrolysis. Appl. Phys. Lett. 89 (2006) 052113