Realization of p-type conduction in (ZnO)1-x(AlN)x thin films grown by RF magnetron sputtering

Journal of Alloys and Compounds

Volumn 478, Issue 1-2, 2009, Pages 54-58

  Bhuvana, K P ^a   Elanchezhiyan, J ^b   Gopalakrishnan, N ^a   Shin, B C ^b   Balasubramanian, T ^a  

^a NATIONAL INSTITUTE OF TECHNOLOGY   (India)

^b Dong Eui University   (South Korea)

Author keywords

Codoping; p Type ZnO; RF magnetron sputtering

Indexed keywords

ALN; BULK VALUES; CO DOPANTS; CO-DOPED ZNO; CODOPING; DIFFRACTION PLANES; DOPED-ZNO; DOPING CONCENTRATIONS; FOURIER-TRANSFORMED INFRARED SPECTROSCOPIES; FTIR; GRAIN SIZES; HALL MEASUREMENTS; P-TYPE CONDUCTIONS; P-TYPE ZNO; PREFERENTIAL ORIENTATIONS; RF MAGNETRON SPUTTERING; SI(1 0 0 ); STRUCTURAL AND ELECTRICAL PROPERTIES; WURTZITE STRUCTURES; X-RAY DIFFRACTIONS; XRD; ZNO;

CARRIER CONCENTRATION; DIFFRACTION; DOPING (ADDITIVES); ELECTRIC PROPERTIES; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MAGNETRON SPUTTERING; MAGNETRONS; METALLIC FILMS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SPECTROSCOPIC ANALYSIS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; ZINC SULFIDE;

ZINC OXIDE;

EID: 67349149648     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2008.12.010     Document Type: Article

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