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Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 627-632

Growth of high-quality epitaxial ZnO films on α-Al2O3

(5) Fons, P a Iwata, K a Niki, S a Yamada, A a Matsubara, K a

a ELECTROTECHNICAL LABORATORY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL LATTICES; INTERFACES (MATERIALS); PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING FILMS; SEMICONDUCTING ZINC COMPOUNDS; SUBSTRATES; THIN FILMS; X RAY CRYSTALLOGRAPHY;

EPILAYERS; EPITAXIAL FILMS; PENDELLOSUNG FRINGES; X-RAY RECIPROCAL LATTICE SCANS;

MOLECULAR BEAM EPITAXY;

EID: 0032643198 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(98)01427-4 Document Type: Article

Times cited : (184)

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