Fabrication and characterization of K-H Co-doped p-ZnO thin films

Journal of Computational and Theoretical Nanoscience

Volumn 5, Issue 8, 2008, Pages 1743-1745

  Wu, Jun ^a   Yang, Yintang ^a  

^a XIDIAN UNIVERSITY   (China)

Author keywords

Doping; p type; Potassium; RF magnetron sputtering; Zinc oxide

Indexed keywords

ATOMIC SPECTROSCOPY; CARRIER CONCENTRATION; CARRIER MOBILITY; COBALT; CRYSTAL ATOMIC STRUCTURE; DOPING (ADDITIVES); ELECTRIC PROPERTIES; HYDROGEN; MAGNETRON SPUTTERING; MAGNETRONS; METALLIC FILMS; OPTICAL FILMS; OXIDES; PHOTOELECTRON SPECTROSCOPY; POTASSIUM; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTING TIN COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; THIN FILMS; ZINC;

ATOM FORCE MICROSCOPIES; AVERAGE GRAIN SIZES; DENSE SURFACES; DOPED IMPURITIES; DOPING; ELECTRICAL PROPERTIES; P TYPE; PREFERENTIAL ORIENTATIONS; RADIO FREQUENCIES; RF MAGNETRON SPUTTERING; SI (100) SUBSTRATES; X-RAY DIFFRACTIONS; ZNO FILMS; ZNO THIN FILMS;

ZINC OXIDE;

EID: 57749102566     PISSN: 15461955     EISSN: None     Source Type: Journal    
DOI: 10.1166/jctn.2008.866     Document Type: Conference Paper

References (22)

1. Ü. Özgür, Y. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Dogan, V. Avrutin, S. J. Cho, and H. Morkoç, J. Appl. Phys. 98, 041301 (2005).
2. W. J. Lee, J. Kang, and K. J. Chang, Phys. Rev. B 73, 024117 ( 2006).
3. P. Erhart, K. Albe, and A. Klein, Phys. Rev. B 73, 205203 (2006).
4. D. C. Look and D. C. Reynolds, Appl. Phys. Lett. 81, 1830 (2002).
5. H. Tabata, M. Saeki, S. L. Guo, J. H. Choi, and T. Kawai, Physica B 308, 993 (2001).
6. X. L. Guo, H. Tabata, and T. Kawai, J. Cryst. Growth. 237, 544 ( 2002).
7. A. Zeuner, H. Alves, J. Sannl, W. Kriegseis, C. Neumann, D. M. Hofmann, B. K. Meyer, A. Hoffmann, U. Haboeck, M. Straßburg, and A. Kaschner, Phys. Stat. Sol. 4, 731 (2004).
8. T. M. Barnes, K. Olson, and C. A. Wolden, Appl. Phys. Lett. 86, 112112 (2005).
9. Y. J. Zeng, Z. Z. Ye, W. Z. Xu, B. Liu, Y. Che, L. P. Zhu, and B. H. Zhao, Mater. Lett. 61, 41 (2007).
10. K. Nakahara and H. Takasu, Appl. Phys. Lett. 79, 4139 (2001).
11. G. D. Yuan, Z. Z. Ye, L. P. Zhu, Q. Qian, B. H. Zhao, and R. X. Fan, Appl. Phys. Lett. 86, 202106 (2005).
12. W. J. Lee, J. Kang, and K. J. Chang, Phys. Rev. B 73, 024117 ( 2006).
13. Y. W. Heo, Y. W. Kwon, Y. Li, S. J. Pearton, and D. P. Norton, Appl. Phys. Lett. 84, 3474 (2004).
14. Q. P. Wang, Z. Sun, J. Du, P. Zhao, X. H. Wu, and X. J. Zhang, Opt. Mater. 29, 1358 (2007).
15. D. K. Hwang, H. S. Kim, J. H. Lim, J. Y. Oh, J. H. Yang, and S. J. Park, Appl. Phys. Lett. 96, 151917 (2005).
16. F. X. Xiu, Z. Yang, L. J. Mandalapu, J. L. Liu, and W. P Beyermann, Appl. Phys. Lett. 88, 052106 (2006).
17. P. Wang, N. F. Chen, Z. G. Yin, F. Yang, C. T. Peng, R. X. Dai, and Y. M. Bai, J. Appl. Phys. 100, 043704 (2006).
18. V. Vaithianathan, B. T. Lee, and S. S. Kim, Appl. Phys. Lett. 86, 062101 (2005).
19. E. C. Lee and K. J. Chang, Physica B 376-377, 707 (2006).
20. E. C. Lee and K. J. Chang, Phys. Rev. B 70, 115210 (2004).
21. C. H. Park, S. B. Zhang, and S. H. Wei, Phys. Rev. B 66, 073202 (2002).
22. Y. J. Zeng, Z. Z. Ye, W. Z. Xu, L. L. Chen, D. Y Li, L. P. Zhu, B. H. Zhao, and Y. L. Hu, J. Cryst. Growth. 283, 190 (2005).