Residual native shallow donor in ZnO

Physical Review Letters

Volumn 82, Issue 12, 1999, Pages 2552-2555

  Look, D C ^a   Hemsky, J W ^a   Sizelove, J R ^a,b  

^a WRIGHT STATE UNIVERSITY   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL DEFECTS; CRYSTAL ORIENTATION; ELECTRON IRRADIATION; ELECTRON TRANSITIONS; EXCITONS; HALL EFFECT; MATHEMATICAL MODELS; ZINC OXIDE;

FRENKEL PAIR; HALL CONCENTRATION; HALL MOBILITY; IRRADIATION NUMBER; MULTIPLE-DISPLACEMENT MODEL;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0032606197     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.82.2552     Document Type: Article

References (22)

1. Y. P. Wang, W. I. Lee, and T.-Y. Tseng, Appl. Phys. Lett. 69, 1807, (1996).
2. D. C. Look, D. C. Reynolds, J. R. Sizelove, R. L. Jones, C. W. Litton, G. Cantwell, and W. C. Harsch, Solid State Commun. 105, 399, (1998).
3. S. Strite, and H. Morkoc, J. Vac. Sci. Technol. B. 10, 1237, (1992).
4. D. C. Reynolds, D. C. Look, and B. Jogai, Solid State Commun. 99, 873, (1996).
5. D. M. Bagnall, Y. F. Chen, Z. Zhu, T. Yao, S. Koyama, M. Y. Shen, and T. Goto, Appl. Phys. Lett. 70, 2230, (1997).
6. G. Heiland, E. Mollwo, and F. Stöckmann, in Solid State Physics, F. Seitz and D. Turnbull (Academic, New York, 1959), Vol. 8, p. 191.
7. F. A. Kröger, The Chemistry of Imperfect Crystals, (North-Holland, Amsterdam, 1974).
8. P. Kasai, Phys. Rev. 130, 989, (1963).
9. K. Vanheusden, C. H. Seager, W. L. Warren, D. R. Tallant, and J. A. Voigt, Appl. Phys. Lett. 68, 403, (1996).
10. D. L. Rode, Semicond. Semimet. 10, 1, (1975).
11. D. C. Reynolds, D. C. Look, B. Jogai, C. W. Litton, T. C. Collins, W. C. Harsch, and G. Cantwell, Phys. Rev. B. 57, 12 151, (1998).
12. P. Wagner, and R. Helbig, J. Phys. Chem. Solids. 35, 327, (1974).
13. F. Agullo-Lopez, C. R. A. Catlow, and P. D. Townsend, Point Defects in Materials, (Academic, New York, 1988).
14. D. Pons, and J. C. Bourgoin, J. Phys. C. 18, 3839, (1985).
15. D. C. Look, D. C. Reynolds, J. W. Hemsky, J. R. Sizelove, R. L. Jones, and R. J. Molnar, Phys. Rev. Lett. 79, 2273, (1997).
16. J. Loferski, and P. Rappaport, Phys. Rev. 111, 432, (1958).
17. D. R. Locker, and J. M. Meese, IEEE Trans. Nucl. Sci. 19, 237, (1972).
18. R. W. Jansen, D. S. Wolde-Kidane, and O. F. Sankey, J. Appl. Phys. 64, 2415, (1988).
19. J. M. Smith, and W. E. Vehse, Phys. Lett. 31A, 147, (1970).
20. S. Coffa, A. La Magna, V. Privitera, and G. Mannino, Appl. Phys. Lett. 73, 1571, (1998).
21. J. A. Van Vechten, in Handbook on Semiconductors, T. S. Moss and S. P. Keller (North-Holland, Amsterdam, 1980), Chap. 1.
22. D. C. Reynolds, D. C. Look, and R. L. Jones, (unpublished).