Optical properties and electrical characterization of p-type zno thin films prepared by thermally oxiding Zn3N2 thin films

Journal of Materials Research

Volumn 18, Issue 1, 2003, Pages 8-13

  Li, B S ^a   Liu, Y C ^a,b   Zhi, Z Z ^b   Shen, D Z ^a   Lu, Y M ^a   Zhang, J Y ^a   Fan, X W ^a   Mu, R X ^c   Henderson, Don O ^c  

^a CHANGCHUN INSTITUTE OF OPTICS   (China)

^b NORTHEAST NORMAL UNIVERSITY   (China)

^c FISK UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; EXCITONS; FILM GROWTH; FUSED SILICA; OXIDATION; PHOTOLUMINESCENCE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

THERMAL OXIDIZATION;

THIN FILMS;

EID: 0037668142     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.2003.0003     Document Type: Article

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