Stable p-type ZnO:P nanowire/n-type ZnO:Ga film junctions, reproducibly grown by two-step pulsed laser deposition

Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 27, Issue 3, 2009, Pages 1693-1697

  Lorenz, Michael ^a   Cao, Bingqiang ^a,b   Zimmermann, Gregor ^a   Biehne, Gisela ^a   Czekalla, Christian ^a   Frenzel, Heiko ^a   Brandt, Matthias ^a   Von Wenckstern, Holger ^a   Grundmann, Marius ^a  

^a UNIVERSITY OF LEIPZIG   (Germany)

^b KYUSHU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; DISTILLATION; DOPING (ADDITIVES); FIELD EFFECT TRANSISTORS; GALLIUM; GALLIUM ALLOYS; NANOTECHNOLOGY; NANOWIRES; PHOSPHORUS; PULSED LASER DEPOSITION; PULSED LASERS; SEMICONDUCTOR JUNCTIONS; WIRE;

A-PLANE SAPPHIRE; CONDUCTING MATERIALS; CURRENT RATIOS; DONOR-ACCEPTOR PAIRS; DOPED ZNO; GA FILM; GA-DOPED ZNO; I - V CURVE; IV CHARACTERISTICS; LOW TEMPERATURES; P TYPE ZNO; P-N JUNCTION; P-TYPE CONDUCTIVITY; TRANSFER CHARACTERISTICS; ZNO;

ZINC OXIDE;

EID: 70449590114     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.3086719     Document Type: Conference Paper

References (18)

1. X. Pan, Fifth International Workshop on ZnO and Related Materials, Ann Arbor, MI, 2008 [J. Vac. Sci. Technol. (unpublished)].
2. T. J. Coutts, X. Li, T. M. Barnes, B. M. Keyes, C. L. Perkins, S. E. Asher, S. B. Zhang, S. H. Wei, and S. Limpijumnong, in Zinc Oxide Bulk, Thin Films and Nanostructures, edited by, C. Jagadish, and, S. Pearton, (Elsevier, Amsterdam, 2006), pp. 43-84.
3. M. Brandt, H. von Wenckstern, H. Schmidt, A. Rahm, G. Biehne, G. Benndorf, H. Hochmuth, M. Lorentz, C. Meinecke, T. Butz, and M. Grundmann, J. Appl. Phys. 0021-8979 10.1063/1.2953066 104, 013708 (2008).
4. M. Lorenz, G. Wagner, A. Rahm, : H. Schmidt, : H. Hochmuth, H. Schmid, W. Mader, : M. Brandt, H. von Wenckstern, and M. Grundmann, Phys. Status Solidi C 5, 3280 (2008). 0021-8979
5. C. H. Liu, W. C. Yiu, K. F. C. Au, J. X. Ding, C. S. Lee, and S. T. Lee, Appl. Phys. Lett. 0003-6951 10.1063/1.1609232 83, 3168 (2003).
6. W. Lee, M. C. Leong, and J. M. Myoung, Appl. Phys. Lett. 0003-6951 10.1063/1.1840124 85, 6167 (2004).
7. C. X. Shan, Z. Liu, C. C. Wong, and S. K. Hark, J. Nanosci. Nanotechnol. 7, 700 (2007). 0003-6951
8. B. Xiang, P. Wang, X. Zhang, S. A. Dayeh, D. P. R. Aplin, C. Soci, D. Yu, and D. Wang, Nano Lett. 1530-6984 10.1021/nl062410c 7, 323 (2007).
9. G. D. Yuan, W. J. Zhang, J. S. Jie, X. Fan, : J. A. Zapien, Y. H. Leung, L. B. Lou, P. F. Wang, : C. S. Lee, and S. T. Lee, Nano Lett. 1530-6984 10.1021/nl073022t 8, 2591 (2008).
10. F. Glas, Phys. Rev. B 0163-1829 10.1103/PhysRevB.74.121302 74, 121302 (R) (2006).
11. M. Lorenz, in Transparent Conductive Zinc Oxide. Basics and Applications in Thin Film Solar Cells, Springer Series in Materials Science, edited by, K. Ellmer, A. Klein, and, B. Rech, (Springer, Berlin, 2008), Vol. 104, pp. 303-358.
12. C. Czekalla, C. Sturm, R. Schmidt-Grund, B. Cao, M. Lorenz, and M. Grundmann, Appl. Phys. Lett. 0003-6951 10.1063/1.2946660 92, 241102 (2008).
13. B. Q. Cao, M. Lorenz, A. Rahm, H. von Wenckstern, C. Czekalla, J. Lenzner, G. Benndorf, and M. Grundmann, Nanotechnology 0957-4484 10.1088/0957-4484/18/45/455707 18, 455707 (2007).
14. B. Q. Cao, M. Lorenz, M. Brandt, H. von Wenckstern, J. Lenzner, G. Biehne, and M. Grundmann, Phys. Status Solidi (RRL) 2, 37 (2008). 0003-6951
15. M. Lorenz, E. M. Kaidashev, : A. Rahm, : Th. Nobis, : J. Lenzner, G. Wagner, : D. Spemann, H. Hochmuth, and M. Grundmann, Appl. Phys. Lett. 0003-6951 10.1063/1.1898433 86, 143113 (2005).
16. M. Yan and B. Harnish, Adv. Mater. (Weinheim, Ger.) 15, 244 (2003). 0935-9648
17. R. Könenkamp, R. C. Word, and M. Godinez, Nano Lett. 1530-6984 10.1021/nl051501r 5, 2005 (2005).
18. S. Heitsch, G. Zimmermann, A. Rahm, C. Bundesmann, G. Wagner, H. Hochmuth, M. Lorentz, H. Schmidt, M. Schubert, and M. Grundmann, Thin Solid Films 0040-6090 10.1016/j.tsf.2005.08.305 496, 234 (2006).