Nanofabrication of III-V semiconductors employing diblock copolymer lithography

Journal of Physics D: Applied Physics

Volumn 43, Issue 18, 2010, Pages

  Kuech, Thomas F ^a   Mawst, Luke J ^a  

^a University of Wisconsin Madison   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONFINEMENTS; CYLINDRICAL DOMAIN; DEFECT REDUCTION; DIBLOCK COPOLYMER; DIELECTRIC LAYER; DIODE LASERS; GAAS; GROWTH YIELD; HIGHER-DEGREE; II-IV SEMICONDUCTORS; INP; LARGE SURFACE AREA; METALORGANIC CHEMICAL VAPOUR DEPOSITION; MOCVD; MOCVD GROWTH; NANO SCALE; NANOFABRICATION; NANOPATTERNING; PATTERNED GROWTH; QUANTUM DOTS; SELF ORGANIZING; SELF-ASSEMBLY GROWTH; VARIABLE TEMPERATURE; WETTING LAYER;

BLOCK COPOLYMERS; CHEMICAL VAPOR DEPOSITION; COPOLYMERIZATION; CRYSTAL GROWTH; GALLIUM ALLOYS; OPTICAL PROPERTIES; POLYSTYRENES; SELF ASSEMBLY; SEMICONDUCTOR GROWTH; SIZE DISTRIBUTION; SUBSTRATES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 77951611922     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/43/18/183001     Document Type: Review

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