Single site-controlled In(Ga)As/GaAs quantum dots: Growth, properties and device integration

Nanotechnology

Volumn 20, Issue 43, 2009, Pages

  Schneider, C ^a   Huggenberger, A ^a   Sunner T ^a   Heindel, T ^a   Strau, M ^a   Gopfert S ^a   Weinmann, P ^a   Reitzenstein, S ^a   Worschech, L ^a   Kamp, M ^a   Hofling S ^a   Forchel, A ^a  

^a UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DETUNED; DEVICE INTEGRATION; EMISSION LINEWIDTH; HETEROSTRUCTURES; HIGH ELECTRON MOBILITY; INAS; NANOELECTRONIC MEMORIES; NANOHOLES; NARROW-LINE WIDTH; OPTICAL QUALITIES; QD STACKS; QUANTUM DOT; QUANTUM DOTS; RESONATOR DEVICES; ROOM TEMPERATURE; SINGLE SITES; VERTICAL STRAIN;

ELECTRON MOBILITY; FLASH MEMORY; GALLIUM; INDIUM ARSENIDE; OPTICAL WAVEGUIDES; RESONATORS; SEMICONDUCTING INDIUM;

SEMICONDUCTOR QUANTUM DOTS;

ARSENIC; GALLIUM; GALLIUM ARSENIDE; INDIUM; QUANTUM DOT;

ACCURACY; ARTICLE; CHEMICAL STRUCTURE; DEVICE; MOLECULAR ELECTRONICS; NANOFABRICATION; OPTICS; PHOTOLUMINESCENCE; PHOTON; PRIORITY JOURNAL; ROOM TEMPERATURE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR; SPECTROSCOPY; TECHNIQUE;

EID: 70349696390     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/20/43/434012     Document Type: Article

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