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Volumn 94, Issue 16, 2009, Pages

Infrared p-i-n photodiodes based on InAs quantum dots grown on 20 nm patterned GaAs

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE EFFECTS; BLOCK COPOLYMER LITHOGRAPHIES; GAAS; GAAS SUBSTRATES; GAIN FACTORS; HEXAGONAL ARRAYS; INAS QUANTUM DOTS; P-I-N PHOTODIODES; PHOTORESPONSE; REVERSE BIAS; ROOM TEMPERATURES; SELECTIVE AREA GROWTHS; SINGLE LAYERS;

EID: 65449130786     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3111159     Document Type: Article
Times cited : (6)

References (25)
  • 1
    • 45549096230 scopus 로고    scopus 로고
    • 0018-9219 10.1109/JPROC.2007.900967.
    • J. C. Campbell and A. Madhukar, Proc. IEEE 0018-9219 10.1109/JPROC.2007. 900967 95, 1815 (2007).
    • (2007) Proc. IEEE , vol.95 , pp. 1815
    • Campbell, J.C.1    Madhukar, A.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.