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Applied Physics Letters

Volumn 88, Issue 4, 2006, Pages 1-3

Nanoepitaxy of InAsInP quantum dots by metalorganic vapor phase epitaxy for 1.55 μm emitters

(7) Benoit, J M a Le Gratiet, L a Beaudoin, G a Michon, A a Saint Girons, G a Kuszelewicz, R a Sagnes, I a

a UNIV PARIS SUD (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; EPITAXIAL GROWTH; NANOSTRUCTURED MATERIALS; OPTICAL PROPERTIES; REACTIVE ION ETCHING; SEMICONDUCTING INDIUM COMPOUNDS; VAPOR PHASE EPITAXY;

NANOGROPWN; NANOMETER-SCALE; NANOPEPITAXY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 31544482116 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2167804 Document Type: Article

Times cited : (11)

References (13)

1
- 4344634808
- H. Y. Liu, I. R. Sellers, T. J. Badcock, D. J. Owbray, M. S. Skolnick, K. M. Groom, M. Guttírrez, M. Hopkinson, J. S. Ng, J. P. R. David, and R. Beanland, Appl. Phys. Lett. 85, 704 (2004).
- (2004) Appl. Phys. Lett. , vol.85 , pp. 704
- Liu, H.Y.¹ Sellers, I.R.² Badcock, T.J.³ Owbray, D.J.⁴ Skolnick, M.S.⁵ Groom, K.M.⁶ Guttírrez, M.⁷ Hopkinson, M.⁸ Ng, J.S.⁹ David, J.P.R.¹⁰ Beanland, R.¹¹

2
- 0037019212
- O. B. Shchekin, J. Ahn, and D. G. Deppe, Electron. Lett. 38, 712 (2003).
- (2003) Electron. Lett. , vol.38 , pp. 712
- Shchekin, O.B.¹ Ahn, J.² Deppe, D.G.³

3
- 0035968799
- E. Moreau, I. Robert, L. Manin, V. Thyerry-Mieg, J. M. Gerard, and I. Abram, Phys. Rev. Lett. 87, 183601 (2001).
- (2001) Phys. Rev. Lett. , vol.87 , pp. 183601
- Moreau, E.¹ Robert, I.² Manin, L.³ Thyerry-Mieg, V.⁴ Gerard, J.M.⁵ Abram, I.⁶

4
- 2442493136
- M. Gendry, C. Monat, J. Brault, P. Regreny, G. Hollinger, B. Salem, G. Guillot, T. Benyattou, C. Bru-Chevalier, G. Bremond, and O. Marty, J. Appl. Phys. 95, 4761 (2004).
- (2004) J. Appl. Phys. , vol.95 , pp. 4761
- Gendry, M.¹ Monat, C.² Brault, J.³ Regreny, P.⁴ Hollinger, G.⁵ Salem, B.⁶ Guillot, G.⁷ Benyattou, T.⁸ Bru-Chevalier, C.⁹ Bremond, G.¹⁰ Marty, O.¹¹

5
- 0038378696
- L. Gonzalez, J. M. Garcia, R. Garcia, F. Briones, and J. Martinez-Pastor, Appl. Phys. Lett. 76, 1104 (2000).
- (2000) Appl. Phys. Lett. , vol.76 , pp. 1104
- Gonzalez, L.¹ Garcia, J.M.² Garcia, R.³ Briones, F.⁴ Martinez-Pastor, J.⁵

6
- 0035535290
- P. J. Poole, J. McCaffrey, R. L. Williams, J. Lefebvre, and D. Chthrani, J. Vac. Sci. Technol. B 19, 1467 (2001).
- (2001) J. Vac. Sci. Technol. B , vol.19 , pp. 1467
- Poole, P.J.¹ McCaffrey, J.² Williams, R.L.³ Lefebvre, J.⁴ Chthrani, D.⁵

7
- 18444407209
- Q. Gong, R. Nötzel, P. J. Veldhoven, and J. H. Wolter, J. Cryst. Growth 278, 67 (2005).
- (2005) J. Cryst. Growth , vol.278 , pp. 67
- Gong, Q.¹ Nötzel, R.² Veldhoven, P.J.³ Wolter, J.H.⁴

8
- 0000252877
- K. Tachibana, T. Someya, S. Ishida, and Y. Arakawa, Appl. Phys. Lett. 76, 3212 (2000).
- (2000) Appl. Phys. Lett. , vol.76 , pp. 3212
- Tachibana, K.¹ Someya, T.² Ishida, S.³ Arakawa, Y.⁴

9
- 0008928073
- Y. D. Galeuchet, H. Rothuizen, and P. Roentgen, Appl. Phys. Lett. 58, 2423 (1991).
- (1991) Appl. Phys. Lett. , vol.58 , pp. 2423
- Galeuchet, Y.D.¹ Rothuizen, H.² Roentgen, P.³

10
- 0001411538
- T. Ishikawa, S. Kohmoto, and K. Asakawa, Appl. Phys. Lett. 73, 1712 (1998).
- (1998) Appl. Phys. Lett. , vol.73 , pp. 1712
- Ishikawa, T.¹ Kohmoto, S.² Asakawa, K.³

11
- 0032023480
- E. S. Kim, N. Usami, and Y. Shiraki, Appl. Phys. Lett. 72, 1617 (1998).
- (1998) Appl. Phys. Lett. , vol.72 , pp. 1617
- Kim, E.S.¹ Usami, N.² Shiraki, Y.³

12
- 0000338540
- T. Ishikawa, T. Nishimura, S. Kohmoto, and K. Asakawa, Appl. Phys. Lett. 76, 167 (2000).
- (2000) Appl. Phys. Lett. , vol.76 , pp. 167
- Ishikawa, T.¹ Nishimura, T.² Kohmoto, S.³ Asakawa, K.⁴

13
- 0030291530
- T. Ishikawa, Jpn. J. Appl. Phys., Part 1 35, 5583 (1996).
- (1996) Jpn. J. Appl. Phys., Part 1 , vol.35 , pp. 5583
- Ishikawa, T.¹

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