Defect reduction in epitaxial GaSb grown on nanopatterned GaAs substrates using full wafer block copolymer lithography

Applied Physics Letters

Volumn 95, Issue 6, 2009, Pages

  Jha, Smita ^a   Liu, C C ^b   Kuan, T S ^c   Babcock, S E ^a   Nealey, P F ^b   Park, J H ^b   Mawst, L J ^b   Kuech, T F ^b  

^a UNIVERSITY OF WISCONSIN MADISON   (United States)

^b University of Wisconsin Madison   (United States)

^c STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BLOCK COPOLYMER LITHOGRAPHY; DEFECT REDUCTION; DENSE ARRAYS; GAAS; GAAS SUBSTRATES; HEXAGONAL PATTERN; LATTICE-MISMATCHED; MASK LAYER; SELF-ASSEMBLED; STRAIN-RELAXED; THREADING DISLOCATION DENSITIES;

BLOCK COPOLYMERS; COPOLYMERIZATION; EPITAXIAL GROWTH; FILM GROWTH; SEMICONDUCTING GALLIUM; SILICON COMPOUNDS;

GALLIUM ALLOYS;

EID: 69049101224     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3204013     Document Type: Article

References (14)

1. F. M. Mohammedy, O. Hulko, B. J. Robinson, D. A. Thompson, M. J. Deen, and J. G. Simmons, J. Vac. Sci. Technol. A 0734-2101 24, 587 (2006). 10.1116/1.2194024
2. Y. Androussi, A. Lefebvre, T. Benabbas, P. Francois, C. Delamarre, J. Y. Laval, and A. Dubon, J. Cryst. Growth 0022-0248 169, 209 (1996). 10.1016/S0022-0248(96)00384-3 (Pubitemid 126364850)
3. K. L. Kavanagh, J. C. P. Chang, J. Chen, J. M. Fernandez, and H. H. Wieder, J. Vac. Sci. Technol. B 1071-1023 10, 1820 (1992). 10.1116/1.586205
4. C. Ferrari, G. Rossetto, and E. A. Fitzgerald, Mater. Sci. Eng., B 0921-5107 91, 437 (2002). 10.1016/S0921-5107(01)00994-1 (Pubitemid 34222795)
5. A. Madhukar, Thin Solid Films 0040-6090 231, 8 (1993). 10.1016/0040-6090(93)90701-P
6. A. Sakai, H. Sunakawa, and A. Usui, Appl. Phys. Lett. 0003-6951 71, 2259 (1997). 10.1063/1.120044
7. S. Birudavolu, N. Nuntawong, G. Balakrishnan, Y. C. Xin, S. Huang, S. C. Lee, S. R. J. Brueck, C. P. Hains, and D. L. Huffaker, Appl. Phys. Lett. 0003-6951 85, 2337 (2004). 10.1063/1.1792792
8. J. H. Park, A. A. Khandekar, S. M. Park, L. J. Mawst, T. F. Kuech, and P. F. Nealey, J. Cryst. Growth 297, 283 (2006). 10.1016/j.jcrysgro.2006.09.049 (Pubitemid 44937293)
9. I. In, Y. H. La, S. M. Park, P. F. Nealey, and P. Gopalan, Langmuir 0743-7463 22, 7855 (2006). 10.1021/la060748g (Pubitemid 44373464)
10. S. Ganesan, Ph.D. thesis, University of Wisconsin-Madison, 2006.
11. A. A. Khandekar, G. Suryanarayan, S. E. Babcock, and T. F. Keuch, J. Cryst. Growth 0022-0248 292, 40 (2006). 10.1016/j.jcrysgro.2006.04.086 (Pubitemid 43974786)
12. J. Tersoff and F. K. Legoues, Phys. Rev. Lett. 0031-9007 72, 3570 (1994). 10.1103/PhysRevLett.72.3570
13. W. Qian, M. Skowronski, R. Kaspi, M. De Graef, and V. P. Dravid, J. Appl. Phys. 0021-8979 81, 7268 (1997). 10.1063/1.365324
14. A. Yu Bablievich, R. A. Cowley, N. J. Mason, S. Weller, and A. Stunault, J. Phys.: Condens. Matter 0953-8984 14, 13505 (2002). 10.1088/0953-8984/14/49/ 308