Epitaxial growth of 20 nm InAs and GaAs quantum dots on GaAs through block copolymer templated SiO2 masks

Journal of Applied Physics

Volumn 105, Issue 5, 2009, Pages

  Alizadeh, Azar ^a   Hays, David ^a   Taylor, Seth T ^a   Keimel, Chris ^a   Conway, Ken R ^a   Denault, Lauraine ^a   Krishnan, Kasiraman ^a   Watkins, Vicki H ^a   Neander, Rosalyn ^a   Brown, Jay S ^b   Stintz, Andreas ^b   Krishna, Sanjay ^b   Blumin, Marina ^c   Saveliev, Igor ^c   Ruda, Harry E ^c   Braunstein, Edit ^d   Jones, Colin ^d  

^a GE GLOBAL RESEARCH   (United States)

^b UNIVERSITY OF NEW MEXICO   (United States)

^c UNIVERSITY OF TORONTO   (Canada)

^d LOCKHEED MARTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BLOCK COPOLYMERS; COPOLYMERIZATION; EPITAXIAL GROWTH; GALLIUM ALLOYS; INDIUM ARSENIDE; POLYMERS; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM;

AREAL DENSITIES; BLOCK COPOLYMER LITHOGRAPHIES; CRYSTALLINE QUALITIES; DOT SIZES; GAAS; GROWTH PARAMETERS; INAS; MEAN DIAMETERS; OPTICAL CHARACTERISTICS; OPTICAL RESPONSE; QUANTUM DOTS; SELECTIVE AREA GROWTHS; TEMPLATED; UNIFORM ARRAYS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 62549088731     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3082494     Document Type: Article

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