Site-controlled lateral arrangements of InAs quantum dots grown on GaAs(001) patterned substrates by atomic force microscopy local oxidation nanolithography

Nanotechnology

Volumn 20, Issue 12, 2009, Pages

  Martin Snchez J ^a   Alonso Gonzlez, P ^a   Herranz, J ^a   Gonzlez, Y ^a   Gonzlez, L ^a  

^a INSTITUTO DE MICROELECTRÓNICA DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

[110] DIRECTIONS; ATOMIC-FORCE MICROSCOPIES; FABRICATION PROCESS; GAAS(001); GROWTH TECHNIQUES; INAS; INAS QUANTUM DOTS; LOCAL OXIDATIONS; MAIN PARAMETERS; MOLECULAR-BEAM EPITAXIES; NUCLEATION SITES; PATTERNED SUBSTRATES; PRECISE CONTROLS;

ATOMIC FORCE MICROSCOPY; ATOMS; CRYSTAL GROWTH; EPITAXIAL GROWTH; GALLIUM ALLOYS; INDIUM ARSENIDE; MOLECULAR BEAMS; MOLECULAR DYNAMICS; NANOLITHOGRAPHY; OXIDATION; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM;

SEMICONDUCTOR QUANTUM DOTS;

ARSENIC; GALLIUM; INDIUM; QUANTUM DOT;

ARTICLE; ATOMIC FORCE MICROSCOPY; BIOCOMPATIBILITY; MOLECULAR BEAM EPITAXY; MOLECULAR SIZE; NANOFABRICATION; NANOLITHOGRAPHY; NANOTECHNOLOGY; NONHUMAN; OXIDATION; PRIORITY JOURNAL; PROCESS DEVELOPMENT; SITE CONTROLLED LATERAL ARRANGEMENT;

EID: 65549119125     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/20/12/125302     Document Type: Article

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