Selective area growth of InAs quantum dots formed on a patterned GaAs substrate

Applied Physics Letters

Volumn 85, Issue 12, 2004, Pages 2337-2339

  Birudavolu, S ^a   Nuntawong, N ^a   Balakrishnan, G ^a   Xin, Y C ^a   Huang, S ^a   Lee, S C ^a   Brueck, S R J ^a   Hains, C P ^a   Huffaker, D L ^a  

^a UNIVERSITY OF NEW MEXICO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DANGLING BONDS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY (HRTEM); HIGH-RESOLUTION X-RAY RECIPROCAL SPACE MAPPING (HRXRSM); PATTERNED PYRAMIDS;

CRYSTALLINE MATERIALS; GROWTH (MATERIALS); INDIUM COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NUCLEATION; PHOTOLITHOGRAPHY; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 7044220407     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1792792     Document Type: Article

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