Study of the characteristics of 1.55 μm quantum dash/dot semiconductor lasers on InP substrate

Applied Physics Letters

Volumn 93, Issue 16, 2008, Pages

  Zhou, D ^a   Piron, R ^a   Grillot, F ^a   Dehaese, O ^a   Homeyer, E ^a   Dontabactouny, M ^a   Batte, T ^a   Tavernier, K ^a   Even, J ^a   Loualiche, S ^a  

^a INSA DE RENNES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; INDIUM ARSENIDE; LASERS; MOLECULAR BEAMS; MOLECULAR DYNAMICS; QUANTUM ELECTRONICS; QUANTUM WELL LASERS; SEMICONDUCTOR QUANTUM DOTS; SUBSTRATES; THRESHOLD CURRENT DENSITY;

ACTIVE ZONES; INP SUBSTRATES; LASER PROPERTIES; LASING WAVELENGTHS; MINIMUM VALUES; MODAL GAINS; MOLECULAR-BEAM EPITAXIES; QD LASERS; QUANTUM DASHES; QUANTUM DOT; STACKED LAYERS;

SEMICONDUCTOR LASERS;

EID: 54949121341     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3005194     Document Type: Article

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