Modulation characteristics of quantum-dot lasers: The influence of p-type doping and the electronic density of states on obtaining high speed

IEEE Journal of Quantum Electronics

Volumn 38, Issue 12, 2002, Pages 1587-1593

  Deppe, Dennis G ^a   Huang, H ^a   Shchekin, Oleg B ^a  

^a The University of Texas at Austin   (United States)

Author keywords

Diode lasers; Long wavelength lasers; Modulation; Quantum dot lasers; Semiconductor lasers; Strain

Indexed keywords

BANDWIDTH; ELECTRONIC DENSITY OF STATES; LIGHT MODULATION; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM DOTS;

LONG-WAVELENGTH LASERS;

SEMICONDUCTOR LASERS;

EID: 0036901858     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2002.805246     Document Type: Article

References (28)

1. M. Asada, Y. Miyamoto, and Y. Suematsu, "Gain and the threshold of three-dimensional quantum box lasers," IEEE J. Quantum Electron., vol. QE-22, pp. 1915-1921, 1986.
2. Y. Arakawa and A. Yariv, "Quantum well lasers - Gain, spectra, dynamics," IEEE J. Quantum Electron., vol. QE-22, pp. 1887-1899, 1986.
3. K. Vahala, "Quantum box fabrication tolerance and size limits in semiconductors and their effects on optical gain," IEEE J. Quantum Electron., vol. QE-24, pp. 523-530, 1988.
4. N. Kirstaedter, N.N. Ledentsov, M. Grundmann, D. Bimberg, V.M. Ustinov, S.S. Ruvimov, M.V. Maximov, P.S. Kop'ev, Z.I. Alferov, U. Richter, P. Werner, U. Gosele, and J. Heydenreich, "Low threshold, large To injection laser emission from InGaAs quantum dots," Electron. Lett., vol. 30, pp. 1416-1417, 1994.
5. O.B. Shchekin and D.G. Deppe, "The role of p-type doping and the density of states on the modulation response of quantum dot lasers," Appl. Phys. Lett., vol. 80, pp. 2758-2760, 2002.
6. K. Matsuda, K. Ikeda, T. Saiki, H. Tsuchiya, H. Saito, and K. Nishi, "Homogeneous linewidth broadening in a InGaAs/GaAs single quantum dot at room temperature investigated using a highly sensitive near-field scanning optical microscope," Phys. Rev. B, vol. 63, pp. 121 304-121 304-4, 2001.
7. M. Bayer and A. Forchel, "Temperature dependence of the exciton homogeneous linewidth in InGaAs/GaAs self-assembled quantum dots," Phys. Rev. B, vol. 65, pp. 41 308-1-41 308-4, 2002.
8. Y. Miyamoto, Y. Miyake, M. Asada, and Y. Suematsu, "Threshold current density of GaInAsP/InP quantum box lasers," IEEE J. Quantumn] Electron., vol. 25, pp. 2001-2006, 1989.
9. K.J. Vahala and C.E. Zah, "Effect of doping on the optical gain and the spontaneous noise enhancement factor in quantum well amplifiers and lasers studied by simple analytical expressions," Appl. Phys. Lett., vol. 52, pp. 1945-1947, 1988.
10. N.-T. Yeh, J.-M. Lee, T.-E. Nee, and J.-I. Chyi, "Self-assembled InGaAs quantum dot lasers with doped active regions," IEEE Photon. Technol. Lett., vol. 12, pp. 1123-1125, 2000.
11. H. Saito, K. Nishi, A. Kamei, and S. Sugou, "Improvement in modulation response of quantum dot lasers through p-type doping," in Proc. 62nd Autumn Meeting-Extended Abstracts, 2001, p. 867.
12. O.B. Shchekin, J. Ahn, and D.G. Deppe, "High temperature performance of a self-organized quantum dot laser with a stacked p-doped active region," Electron. Lett., vol. 38, pp. 712-713, 2002, submitted for publication.
13. W. Sheng and J.-P. Leburton, "Interband transition distributions in the optical spectra of InAs/GaAs self-assembled quantum dots," Appl. Phys. Lett., vol. 80, pp. 2755-2757, 2002.
14. O. Stier, M. Grundmann, and D. Bimberg, "Electronic and optical properties of strained quantum dots modeled by 8-band k · p theory," Phys. Rev. B, vol. 59, pp. 5688-5701, 2002.
15. D.G. Deppe and D.L. Huffaker, "Quantum dimensionality, entropy, and the modulation response of quantum dot lasers," Appl. Phys. Lett., vol. 77, pp. 3325-332, 2000.
16. P. Bhattacharya, D. Klotzkin, O. Qasaimeh, W. Zhou, S. Krishna, and D. Zhu, "High-speed modulation and switching characteristics of In(Ga)As-Al(Ga)As self-organized quantum-dot lasers," IEEE J. Select. Topics Quantum Electron., vol. 6, pp. 426-438, 2000.
17. H. Saito, K. Nishi, A. Kamei, and S. Sugou, "Low chirp observed in directly modulated quantum dot lasers," IEEE Photon. Technol. Lett., vol. 12, pp. 1298-1300, 2000.
18. R. Krebs, F. Klopf, S. Rennon, J.P. Reithmaier, and A. Forchel, "High frequency characteristics of InAs/InGaAs quantum dot distributed feedback lasers emitting at 1.3 μm," Electron. Lett., vol. 37, pp. 1223-1225, 2001.
19. H. Saito, K. Nishi, and S. Sugou, "Low chirp operation in 1.6 μm quantum dot laser under 2.5 GHz direct modulation," Electron. Lett., vol. 37, pp. 1293-1295, 2001.
20. o: 160 K from 0 to 80° C," Appl. Phys. Lett., vol. 80, pp. 3277-3279, 2002, to be published.
21. o 1.3 μm InAs quantum dot lasers due to P-type modulation doping of the active region," IEEE Photon. Technol. Lett., vol. 14, pp. 1231-1233, 2002, to be published.
22. H. Kressel and J.K. Butler, Semiconductor Lasers and Heterojunction LED's. New York: Academic, 1977, p. 263.
23. G. Park, O.B. Shchekin, D.L. Huffaker, and D.G. Deppe, "Low threshold oxide-confined 1.3 μm quantum dot laser," IEEE Photon. Technol. Lett., vol. 12, pp. 230-232, 2000.
24. _, "InGaAs quantum dot lasers with sub-mA thresholds and ultra-low threshold current density below room temperature," Electron. Lett., vol. 36, pp. 1283-1284, 2000.
25. G.T. Liu, A. Stintz, H. Li, K.J. Malloy, and L.F. Lester, "Extremely low room-temperature threshold current density diode lasers using InAs dots in InGaAs quantum well," Electron. Lett., vol. 35, pp. 1163-1165, 1999.
26. D.L. Huffaker and D.G. Deppe, "Electroluminescence efficiency of 1.3 μm wavelength InGaAs/GaAs quantum dots," Appl. Phys. Lett., vol. 73, pp. 520-522, 1998.
27. D.G. Deppe, D.L. Huffaker, S. Csutak, Z. Zou, G. Park, and O.B. Shchekin, "Spontaneous emission and threshold characteristics of 1.3 μm InGaAs/GaAs quantum dot GaAs-based lasers," IEEE J. Quantum Electron., vol. 35, pp. 1238-1246, 1999.
28. L. Zhang, T. Boggess, D.G. Deppe, D.L. Huffaker, O.B. Shchekin, and C. Cao, "Dynamic response of 1.3 μm wavelength InGaAs/GaAs quantum dots," Appl. Phys. Lett., vol. 76, pp. 1222-1224, 2000.