Room temperature continuous-wave operation of buried ridge stripe lasers using InAs-InP (100) quantum dots as active core

IEEE Photonics Technology Letters

Volumn 17, Issue 7, 2005, Pages 1369-1371

  Lelarge, Francois ^a   Rousseau, Benjamin ^a   Dagens, Beatrice ^a   Poingt, Francis ^a   Pommereau, Frederic ^a   Accard, Alain ^a  

^a ALCATEL THALES III V LAB   (France)

Author keywords

Gas source molecular beam epitaxy (GSMBE); InGaAsP InP quantum dot (QD) lasers; Semiconducting III V materials

Indexed keywords

CURRENT DENSITY; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM DOTS; TEMPERATURE;

BURIED RIDGE STRIPE LASERS; GAS SOURCE MOLECULAR BEAM EPITAXY (GSMBE); HAKKI-PAOLI METHOD; QUANTUM DOT LASERS; THRESHOLD CURRENT;

SEMICONDUCTOR LASERS;

EID: 23844448061     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2005.848279     Document Type: Article

References (12)

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